Epitaxial structure, growth process and chip process of near-infrared light emitting diode

A technology of light-emitting diodes and epitaxial structures, applied in crystal growth, single crystal growth, electrical components, etc., can solve problems such as difficulty in meeting the high power requirements of near-infrared light-emitting diodes, low internal quantum efficiency of near-infrared diodes, and difficult breakthroughs in power. Achieve the effects of improving external quantum efficiency, increasing light output angle, and high power

Active Publication Date: 2014-01-08
XIAMEN CHANGELIGHT CO LTD
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  • Summary
  • Abstract
  • Description
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  • Application Information

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Problems solved by technology

[0003] In the prior art, near-infrared products are mainly near-infrared light-emitting diodes grown by liquid phase epitaxy with AlGaAs heterojunction as the act

Method used

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  • Epitaxial structure, growth process and chip process of near-infrared light emitting diode
  • Epitaxial structure, growth process and chip process of near-infrared light emitting diode
  • Epitaxial structure, growth process and chip process of near-infrared light emitting diode

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Embodiment 1

[0059] Such as figure 1 As shown in the first embodiment 100 of the epitaxial structure of a near-infrared light-emitting diode disclosed in the present invention, the cut-off layer 12, the first-type current spreading layer 13, the first-type confinement layer 14, the first-type confinement layer 14, and the The active layer 15 , the second-type confinement layer 16 , the second-type current spreading layer 17 , and the second-type current spreading layer 17 are composed of a first component 171 and a second component 172 .

[0060] Wherein, the corrosion stop layer 12 is (Al 0.1 Ga 0.9 ) 0.5 In 0.5 Composed of P material; the active layer 15 adopts the quantum well structure of AlGaInAs / AlGaAs, the logarithm of the quantum well is 7 pairs, and the light emission wavelength is 850nm; Layer 14 and the second-type confinement layer 16 are made of AlGaAs material, and the first component 171 of the second-type current spreading layer is made of Al 0.1 Ga 0.9 As III-V compo...

Embodiment 2

[0064] Such as Figure 4 Shown is the second embodiment 200 of the epitaxial structure of a near-infrared light-emitting diode disclosed by the present invention. On the GaAs substrate 21, the first-type current spreading layer 22, the first-type confinement layer 23, the active layer 24, the second The second-type confinement layer 25 , the second-type current spreading layer 26 , and the second-type current spreading layer 26 are composed of a first component 261 and a second component 262 .

[0065] Among them, the active layer 24 adopts the quantum well structure of AlGaInAs / AlGaAs, the logarithm of the quantum wells is 3 pairs, and the light emission wavelength is 850nm; the material of the first-type current spreading layer 22 is AlGaInP III-V compound, and the thickness is 8.5 μm , the first-type confinement layer 23 and the second-type confinement layer 25 are made of AlGaInP III-V compound, and the first component 261 of the second-type current spreading layer 26 is m...

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Abstract

The invention discloses an epitaxial structure of a near-infrared light emitting diode. A first type current spreading layer, a first type limiting layer, an active layer, a second type limiting layer and a second type current spreading layer are grown on a substrate layer in sequence; the second type current spreading layer consists of a first constituent and a second constituent; a contact interface with a diffuse reflection effect is formed between the first constituent and the second constituent. The invention also discloses an epitaxial growth process of the near-infrared light emitting diode. The epitaxial structure of the current spreading layer with the diffuse reflection effect is formed by using the epitaxial growth process, so that the external quantum efficiency is obviously improved, and the near-infrared light emitting diode can reach higher power.

Description

technical field [0001] The invention relates to an epitaxial structure, a growth process and a chip technology of a near-infrared light-emitting diode, in particular to an epitaxial structure, a growth process and a chip process of an infrared light-emitting diode of the III-V arsenic-phosphorus compound system. Background technique [0002] Near-infrared light-emitting diodes have the characteristics of low power consumption, small size and high reliability, and are widely used in technical fields such as communication and remote sensing devices. [0003] In the prior art, near-infrared products are mainly near-infrared light-emitting diodes grown by liquid phase epitaxy with an AlGaAs heterojunction as the active layer. It is difficult to make a breakthrough in power, and it is difficult to meet the high power demand of products for near-infrared light-emitting diodes. [0004] With the development of science and technology, the demand for the power of near-infrared light...

Claims

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Application Information

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IPC IPC(8): H01L33/30H01L33/62H01L33/60H01L33/00
CPCC30B25/02H01L33/0062H01L33/10
Inventor 林志伟陈凯轩蔡建九张永林志园尧刚
Owner XIAMEN CHANGELIGHT CO LTD
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