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Semiconductor device

A semiconductor, conductive type technology, applied in the direction of semiconductor devices, electric solid devices, electrical components, etc., can solve the problems such as the characteristics of resistance elements are prone to change, and achieve the effect of stabilizing characteristics and preventing leakage current.

Active Publication Date: 2014-01-15
LAPIS SEMICON CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In the resistance element composed of a plurality of diffused resistance regions 103 disclosed in Patent Document 1, since the oxide film 121 is thin, the characteristics of the resistance element tend to fluctuate due to fluctuations in the power supply voltage applied to the polysilicon layer 107. a question

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  • Semiconductor device
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Embodiment Construction

[0018] Hereinafter, embodiments of the present invention will be described with reference to the drawings.

[0019] figure 2 This is a diagram schematically showing a part of the layout of the semiconductor device 1 according to the present embodiment in plan view. The semiconductor device 1 includes a plurality of semiconductor elements such as a resistive element, a MOS transistor, and a capacitive element constituting a semiconductor integrated circuit. figure 2 It is a diagram showing the layout of the resistance elements 5A, 5B, 5C, and 5D among these plurality of semiconductor elements. also, image 3 yes figure 2 A schematic cross-sectional view of the semiconductor device 1 taken along line III-III, Figure 4 yes figure 2 A schematic cross-sectional view of the semiconductor device 1 taken along line IV-IV, Figure 5 yes figure 2 A schematic cross-sectional view of the semiconductor device 1 taken along line V-V, Image 6 yes figure 2 A schematic cross-s...

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Abstract

The invention provides a semiconductor device with more stable resistance characteristics. The semiconductor device includes: a first well (11A) of a first conductive type formed in the semiconductor substrate (10); a second well (11B) of the first conductive type, separated from the first well (11A) in a horizontal direction; an intermediate insulating film (20, 21) covering the semiconductor substrate (10); first and second resistive layers (32A, 32B) formed on the intermediate insulating film (20, 21); and a conductive layer (33B) formed above a semiconductor region between the first well (11A) and the second well (11B). The first resistive layer (32A) and the first well (11A) form a first resistance element, and the second resistive layer (32B) and the second well (11B) form a second resistance element. The intermediate insulating film (20, 21) intervenes between the conductive layer (33B) and the semiconductor region. The conductive layer (33B) is held at the potential that prevents the formation of an inversion layer in the semiconductor region.

Description

technical field [0001] The present invention relates to a semiconductor device including a resistor element as a component of a semiconductor integrated circuit. Background technique [0002] In general, in semiconductor integrated circuits, resistive elements are widely used for voltage control such as dividing or stepping down a power supply voltage or a signal voltage. Such a resistive element is disclosed, for example, in JP-A-7-111311 (Patent Document 1). [0003] figure 1 is a schematic cross-sectional view of a semiconductor device including a resistance element disclosed in Patent Document 1. FIG. figure 1 The shown semiconductor device has: an n-type silicon substrate 101; a plurality of p+-type diffusion resistance regions 103 formed on the surface layer of the silicon substrate 101; a thin oxide film 121 formed on the silicon substrate 101; The polysilicon layer (low-resistance layer) 107 covers the upper surface of the oxide film 121 except directly above the ...

Claims

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Application Information

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IPC IPC(8): H01L27/08
CPCH01L27/0802
Inventor 菊池秀和大竹久雄菅井男也
Owner LAPIS SEMICON CO LTD