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A kind of in-doped zinc sulfide thin film and its preparation method and application

A thin film, zinc source technology, applied in the direction of final product manufacturing, sustainable manufacturing/processing, semiconductor/solid-state device manufacturing, etc., can solve problems such as unfavorable thin-film solar cell conversion efficiency, and achieve easy thin-film composition, low preparation cost, and reduced The effect of resistivity

Active Publication Date: 2015-12-02
FUZHOU UNIV
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  • Abstract
  • Description
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  • Application Information

AI Technical Summary

Problems solved by technology

[0004] However, due to the high resistivity of the intrinsic ZnS film (about 10 7 -10 8 Ωcm), which is not conducive to improving the conversion efficiency of thin-film solar cells

Method used

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  • A kind of in-doped zinc sulfide thin film and its preparation method and application
  • A kind of in-doped zinc sulfide thin film and its preparation method and application
  • A kind of in-doped zinc sulfide thin film and its preparation method and application

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Experimental program
Comparison scheme
Effect test

Embodiment 1

[0017] Take 15ml of zinc acetate with a concentration of 0.4mol / L and 15ml of sodium citrate with a concentration of 0.1mol / L, according to the doping amount of 0at.%, 0.5at.%, 1at.%, 2at.%, 3at.%, 4 at.% indium sulfate as doping source. Add 87.5ml of deionized water and mix well. Acetic acid was added dropwise to the solution to adjust the pH of the solution to 4.0.

[0018] Place the solution in a water bath for heating. After the temperature of the solution reached 85° C., 15 ml of thioacetamide with a concentration of 0.4 mol / L was added to the solution. Starting from the time of adding thioacetamide, react at a water bath temperature of 85° C. for 1.5 h.

[0019] The deposited In-doped ZnS film was deposited on N 2 The annealing treatment is carried out in the atmosphere, the temperature of the annealing treatment is 350°C, the time of the annealing treatment is 1.5h, and it is cooled to room temperature.

[0020] Phase analysis of In-doped ZnS thin films.

[0021] ...

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Abstract

The invention discloses an In-doped zinc sulfide film and its preparation method and application. The chemical bath deposition method is used to prepare the film, which belongs to non-vacuum chemical vapor deposition. The film composition of the method is easy to control, the preparation cost is low, and it is suitable for large-scale production. . The present invention utilizes the method of doping impurity to reduce the resistivity of zinc sulfide thin film, test shows: when doping 2at.% In in ZnS, the impurity phase of thin film is few, and optical transmittance is high (optical transmittance of visible light region The pass rate is about 85%) and the resistivity is low (2.6×105Ωcm). The prepared ZnS thin film is suitable as a buffer layer material for solar cells.

Description

technical field [0001] The invention belongs to the field of material preparation, and in particular relates to a zinc sulfide film doped with a buffer layer material suitable for solar cells and a preparation method thereof. Background technique [0002] In the typical structure of thin film solar cells, a buffer layer is often introduced to improve the conversion efficiency of solar cells. CdS and CdSe are the most widely used buffer layer materials in thin film solar cells. However, due to the toxicity of Cd, it is more harmful to the environment, and it is difficult to recycle the battery after treatment. At the same time, there are also problems such as narrow energy band gap, and the sunlight below 516nm is not allowed to pass through it and enter the absorbing layer, which makes the photovoltaic module products containing Cd a big market problem. In recent years, the research on buffer layer materials mainly focuses on the preparation of cadmium-free buffer layer ma...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/18H01L31/0296H01L31/0352
CPCH01L21/02474H01L21/02499H01L21/02628H01L31/1828Y02E10/543Y02P70/50
Inventor 程树英廖洁周海芳赖云锋俞金玲龙博贾宏杰张红
Owner FUZHOU UNIV