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Method for preparing quantum dot single photon source in hexagonal prism nano-microcavity

A single photon source and quantum dot technology, which is applied in nanotechnology, nanotechnology, nanotechnology for information processing, etc., can solve the problems of difficult quantum dot positioning, complex preparation process, etc., and achieve good three-dimensional confinement, Simple process and high reproducibility

Active Publication Date: 2016-03-23
INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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  • Abstract
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  • Application Information

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Problems solved by technology

However, the current difficulties are that its preparation process is complex and it is difficult to achieve precise positioning of quantum dots.

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  • Method for preparing quantum dot single photon source in hexagonal prism nano-microcavity

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[0022] It should be noted that, in the drawings or descriptions of the specification, similar or identical parts all use the same figure numbers. Implementations not shown or described in the accompanying drawings are forms known to those of ordinary skill in the art. Additionally, while illustrations of parameters including particular values ​​may be provided herein, it should be understood that the parameters need not be exactly equal to the corresponding values, but rather may approximate the corresponding values ​​within acceptable error margins or design constraints. In addition, the directional terms mentioned in the following embodiments, such as "upper", "lower", "front", "rear", "left", "right", etc., are only referring to the directions of the drawings. Accordingly, the directional terms are used to illustrate and not to limit the invention.

[0023] In an exemplary embodiment of the present invention, a method for preparing a quantum dot single photon source in a h...

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Abstract

The invention provides a method for preparing a quantum-dot single photon source in a hexagonal-prism nano microcavity. The method comprises the steps as follows: step 1, taking a semiconductor substrate, and growing a silicon dioxide layer containing oxidation holes on the semiconductor substrate; step 2, washing the semiconductor substrate, where the silicon dioxide layer grows; step 3, adopting an autocatalysis method to grow a GaAs nanowire on the silicon dioxide layer, and forming a Ga droplet at the top of the GaAs nanowire; step 4, adopting high As pressure processing to consume the Ga droplet at the top of the GaAs nanowire, restraining axial VLS (vapor-liquid-solid method) growth of the GaAs nanowire, and forming a prismatic shaped structure; step 5, depositing a first AlGaAs barrier layer on the side wall of the prismatic shaped structure, and depositing GaAs quantum dots at a low speed on the surface of the AlGaAs barrier layer; step 6, covering the GaAs quantum dots with a second AlGaAs barrier layer; and step 7, growing a GaAs protective layer on the surface of the second AlGaAs barrier layer to finish the preparation.

Description

technical field [0001] The invention belongs to the technical field of semiconductor materials and devices, and relates to a method for preparing a quantum dot single photon source in a hexagonal prism nano-microcavity. Background technique [0002] Single photon sources are key devices for applications such as quantum computing, quantum communication, weak signal testing, and quantum key transmission. Low-density quantum dots grown in the SK (Stranski-Krastanov) mode are used to prepare single photon source. It has the advantages of high oscillator strength, narrow spectral line width, tunable wavelength, and easy integration, so it has become a research hotspot in the field of solid-state quantum physics and quantum information devices. [0003] Due to the difference in refractive index, most of the light emitted by the quantum dots (98%) is almost totally reflected by the material. In recent years, placing individual quantum dots in microcavities, such as photonic crys...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L33/04H01L33/00H01L33/14B82Y10/00B82Y40/00
CPCB82Y40/00H01L33/0066H01L33/04H01L33/30
Inventor 喻颖査国伟徐建星尚向军李密锋倪海桥贺振宏牛智川
Owner INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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