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Optical/crystal comprehensive film thickness monitoring method

A technology of crystal control and film thickness, which is applied in metal material coating process, vacuum evaporation plating, coating, etc., can solve the problem of large error and reduce the effect of influence

Active Publication Date: 2014-01-29
SHANGHAI INST OF OPTICS & FINE MECHANICS CHINESE ACAD OF SCI
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  • Application Information

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Problems solved by technology

This method combines the advantages of the photoelectrode value method and the quartz crystal oscillation method, and can overcome the fact that when the two are used alone, the tool factor of the quartz crystal oscillator is easily affected by the deposition parameters of the film, and the photoelectric value method has large errors in monitoring the irregular film system. The problem

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  • Optical/crystal comprehensive film thickness monitoring method
  • Optical/crystal comprehensive film thickness monitoring method
  • Optical/crystal comprehensive film thickness monitoring method

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Embodiment Construction

[0036] The present invention will be further described in conjunction with embodiment and accompanying drawing below.

[0037] see first figure 2 , figure 2 It is a schematic structural diagram of the coating device of the film thickness monitoring method for improving optical performance of the present invention. As can be seen from the figure, the coating device used in the present invention comprises a light control-crystal control comprehensive film thickness monitoring system composed of a light source emission system 18, a monitoring sheet system 14, a signal receiving system 19, a lock-in amplifier 12 and a crystal controller 26. system, and a computer 30 with a control program, a damper switch control circuit 20. Lock-in amplifier 12, crystal control instrument 26, monochromator 7 are connected with the first serial port 29, the second serial port 32, the third serial port 37 of the computer 30 with the RS232 serial port of carrying and control program respectively...

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Abstract

The invention discloses an optical / crystal comprehensive film thickness monitoring method for accurately controlling a film coating device to prepare a high-performance optical thin film. The method comprises the following steps: inputting film coating parameters to a computer before film coating; providing a film coating monitoring table of a coated film system according to the input film coating parameters by the computer, wherein the film coating parameters include monitoring wavelength of the corresponding layer film, the theory extreme value or crystal control coefficient; and coating the film. The optical / crystal comprehensive film thickness monitoring method provided by the invention integrates advantages of a photoelectricity extreme method and a quartz crystal oscillation method, and can overcome the defects that a tool factor of a quartz crystal oscillator is easily influenced by film layer deposition parameters when the photoelectricity extreme method and the quartz crystal oscillation method are used individually, and the error is great when a non-structured membrane system is monitored by the photoelectricity extreme method. The method can be used for monitoring a structured membrane system and the non-structured membrane system, lowers the film thickness monitoring error effectively, improves the spectrum performance of the film, and has favorable repeatability.

Description

technical field [0001] The invention relates to coating, in particular to an optical control-crystal control comprehensive film thickness monitoring method used for precise control of a coating device to prepare a high-performance optical thin film. Background technique [0002] The thickness of the film decisively affects the optical properties of the film. Achieving precise control of film thickness is a key factor in the preparation of high-performance optical films. [0003] The methods of film thickness control usually include optical monitoring method and quartz crystal oscillation method. The optical monitoring method directly monitors the optical thickness of the film layer, which uses the principle that the transmittance (or reflectance) of the film changes with the change of the film thickness to realize the monitoring of the film thickness; the more commonly used optical monitoring method is the photoelectrode Value method, the photoelectrode value method takes ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/54C23C14/24
Inventor 朱美萍易葵齐红基邵建达
Owner SHANGHAI INST OF OPTICS & FINE MECHANICS CHINESE ACAD OF SCI
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