A doping process and equipment for n-type low-resistance gallium arsenide single crystal growth
A gallium arsenide, n-type technology, applied in the direction of single crystal growth, single crystal growth, crystal growth, etc., can solve the problem of difficult to accurately control the impurity amount of gallium arsenide single crystal, and achieve the effect of good electrical performance
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[0016] The present invention will now be described more fully with reference to the accompanying drawings, in which exemplary embodiments of the invention are shown. This invention may, however, be embodied in many different forms and should not be construed as limited to the exemplary embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the invention to those skilled in the art.
[0017] For ease of description, spatially relative terms such as "upper," "lower," "left," and "right" may be used herein to describe the relationship of one element or feature relative to another element or feature shown in the figures. It will be understood that the spatial terms are intended to encompass different orientations of the device in use or operation in addition to the orientation depicted in the figures. For example, if the device in the figures is turned over, elements described ...
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