A doping process and equipment for n-type low-resistance gallium arsenide single crystal growth

A gallium arsenide, n-type technology, applied in the direction of single crystal growth, single crystal growth, crystal growth, etc., can solve the problem of difficult to accurately control the impurity amount of gallium arsenide single crystal, and achieve the effect of good electrical performance

Active Publication Date: 2016-04-27
北京星云联众科技有限公司
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, the former is a binary impurity and reacts with diboron trioxide in the melt, while the latter is a volatile impurity, so it is difficult to precisely control the impurity amount in GaAs single crystal

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  • A doping process and equipment for n-type low-resistance gallium arsenide single crystal growth
  • A doping process and equipment for n-type low-resistance gallium arsenide single crystal growth

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Embodiment Construction

[0016] The present invention will now be described more fully with reference to the accompanying drawings, in which exemplary embodiments of the invention are shown. This invention may, however, be embodied in many different forms and should not be construed as limited to the exemplary embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the invention to those skilled in the art.

[0017] For ease of description, spatially relative terms such as "upper," "lower," "left," and "right" may be used herein to describe the relationship of one element or feature relative to another element or feature shown in the figures. It will be understood that the spatial terms are intended to encompass different orientations of the device in use or operation in addition to the orientation depicted in the figures. For example, if the device in the figures is turned over, elements described ...

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Abstract

The invention discloses a novel doping process and equipment for growth of an n type low resistance gallium arsenide single crystal. When the gallium arsenide single crystal grows, solid Ga2Te3 is added into the used gallium arsenide raw material, and the dosage of the Ga2Te3 can be calculated according to the quantity of the used raw material and the doping density of the required gallium arsenide single crystal. Corresponding electrical measurement is carried out on the grown gallium arsenide single crystal, and then the doping amount is adjusted appropriately according to measurement results. Finally, the gallium arsenide single crystal with the electrical property completely meeting the requirement is obtained. According to the novel doping process, the doping amount of the grown gallium arsenide single crystal can be controlled accurately, and the grown n type low resistance gallium arsenide single crystal has good electrical property.

Description

technical field [0001] The invention relates to a new doping process and equipment for n-type low-resistance gallium arsenide single crystal growth. Background technique [0002] The n-type low-resistance gallium arsenide single crystal is the substrate for the epitaxial materials required for the preparation of various gallium arsenide optoelectronic devices and several gallium arsenide microwave devices. The performance of the substrate material affects the quality of the epitaxial material, thereby affecting the parameters, reliability, and life of the device. Moreover, some material parameters directly have a great impact on device performance. Therefore, a high-quality gallium arsenide substrate material is a necessary condition for improving device performance, reliability, and lifetime. Usually the material is grown by Vertical Gradient Condensation (VGF) or Liquid Seal Czochralski (LEC). During growth, appropriate dopants need to be added to the raw materials to c...

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C30B29/42C30B11/00
Inventor 李玉平
Owner 北京星云联众科技有限公司
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