Method for preparing N-doped graphene through ion implantation

Abstract

The invention provides a method for preparing N-doped graphene through ion implantation, and the method comprises the following steps: providing a multilayer film substrate which comprises a Si layer,a SiO2 layer, an amorphous SiC layer, a Cu layer and a Ni layer, wherein the Si layer, the SiO2 layer, the amorphous SiC layer, the Cu layer and the Ni layer are sequentially set, and the amorphous SiC layer can be replaced by a DLC film; carrying out the implantation of nitrogen ions on the surface of the Ni layer of the multilayer film substrate, and obtaining an N-doped substrate; carrying outthe annealing of the N-doped substrate, and obtaining N-doped graphene. According to the invention, the method combines the ion implantation technology and a solid state carbon source method, takes amorphous SiC or the DLC film as a carbon source, enables the nitrogen atoms and carbon atoms to be segregated through the ion implantation, and further achieves the preparation of the N-doped graphene. The method achieves the control of a doping quantity of nitrogen atoms through the control of the ion implantation parameter. An experiment result indicates that the method can achieve the precise control of the doping quantity of the nitrogen atoms, and the electronic mobility of the obtained N-doped graphene can reach 850cm<2>V<-1>s<-1>.

Description

technical field [0001] The invention relates to the technical field of graphene preparation, in particular to a method for preparing nitrogen-doped graphene by ion implantation. Background technique [0002] Graphene is a new type of two-dimensional material. Due to its excellent properties in mechanical, optical, electrical and chemical aspects, graphene materials have great application potential. However, the valence band and conduction band of intrinsic graphene are conically contacted in the center of the Brillouin zone. It is a semiconductor or semi-metal with zero band gap, which cannot be turned off, which limits its application in nanoelectronics. Therefore, it is of great significance to open the band gap of intrinsic graphene. Doping is the most common method to modulate the electrical properties of graphene, and the common doped heteroatoms are mainly N (nitrogen) and B (boron). [0003] At present, the research on nitrogen-doped graphene mainly includes the fol...

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Problems solved by technology

This method will be affected by factors such as gas flow velocity, growth temperature, growth time and catalytic substrate, and it is difficult to precisely control the form and amount of doping

[0005] 2. Irradiation or plasma treatment method: This method directly uses low-energy ions or plasma to bombard graphene, so as to achieve the purpose of replacement doping, but due to the low efficiency of N atom replacement doping, the bombardment will also lead to more Many point defects affect the electrical properties of graphene materials

The doping amount and controllability of this method are very poor, and it is difficult to prepare large-area graphene materials, which cannot meet the requirements of nanoelectronics

[0007] In summary, the methods for preparing nitrogen-doped graphene in the prior art all have the problem that the amount of nitrogen doping is uncontrollable, and the electrical properties of the prepared nitrogen-doped graphene are poor.

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