NAND gate circuit, displayer backboard and displayer

A non-gate circuit and display technology, applied in logic circuits, static indicators, logic circuits with logic functions, etc., can solve the problems of inability to achieve VSS, the output cannot be rail-to-rail, and the leakage current is large, so as to reduce the leakage current. , the effect of improving stability and speed

Active Publication Date: 2014-02-05
BOE TECH GRP CO LTD
View PDF3 Cites 13 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

exist figure 2 Among them, T1, T2, and T3 are respectively the first N-type transistor, the second N-type transistor, and the third N-type transistor, IN1 and IN2 respectively mark the first input signal and the second input signal, and OUT marks the output signal. VDD indicates high level, VSS indicates low level; T3 forms a diode connection, which acts as a pull-up resistor. When IN1 and IN2 are high at the same time, T1 and T2 are turned on at the same time, and OUT is pulled down; but because T3 is Long pass, there is a DC path from VDD to VSS, and the ou

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • NAND gate circuit, displayer backboard and displayer
  • NAND gate circuit, displayer backboard and displayer
  • NAND gate circuit, displayer backboard and displayer

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0028] The following will clearly and completely describe the technical solutions in the embodiments of the present invention with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only some, not all, embodiments of the present invention. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the protection scope of the present invention.

[0029] The source and drain of the TFT transistor used in all embodiments of the present invention are symmetrical, so there is no difference between the source and the drain. In the embodiment of the present invention, in order to distinguish the two poles of the TFT transistor except the gate, one pole is called the source, and the other pole is called the drain. In addition, according to the characteristics of field effect transistors, transistors can be di...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention provides an NAND gate circuit, a displayer backboard and a displayer. The NAND gate circuit comprises at least two input transistors, at least two upward-pulling modules and at least two input control transistors. A first electrode of each input transistor is connected with the output end of a second electrical level through one corresponding upward-pulling module. Each input control transistor is used for controlling the electric potential the control end of the corresponding upward-pulling module connected with the first electrode of the input transistor to be a first electrical level when an input signal received by a grid electrode of the input control transistor is the second electrical level. The two upward-pulling modules are used for disconnecting the output end of the second electrical level and the output end of the NAND gate circuit when all the input signals are the second electrical level and used for connecting the output end of the second electrical level and the output end of the NAND gate circuit when not all the input signals are the second electrical level. According to the NAND gate circuit, when a depletion mode TFT is adopted, lossless transmission of output of an NAND gate can be achieved, and rail-to-rail output of the NAND is achieved.

Description

technical field [0001] The invention relates to the field of display technology, in particular to a NAND gate circuit, a display backplane and a display. Background technique [0002] At present, there are many kinds of processes for manufacturing the backplane of display devices, such as a-Si (amorphous silicon) TFT transistor (Thin Film Transistor, thin film field effect transistor) display device, LTPS (Low Temperature Poly-silicon, low temperature polysilicon) TFT display device , Oxide TFT transistors (oxide TFT transistors) display devices, etc., a-Si TFT transistors have the disadvantages of low mobility and poor stability, and LTPS TFT transistors are not suitable for the preparation of large-scale panels. The I-V transfer characteristic of the oxide TFT transistor is usually a depletion type, that is, when the gate-source voltage Vgs of the oxide TFT transistor is zero, the oxide TFT transistor is still turned on. [0003] The depletion mode TFT transistor brings g...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): H03K19/20G09G3/20
CPCH03K19/018507H03K19/09441H03K19/09445H03K19/20
Inventor 吴仲远宋丹娜段立业
Owner BOE TECH GRP CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products