Manufacturing method of molybdenum targets

Abstract

Disclosed is a manufacturing method of a molybdenum target. The method comprises providing molybdenum powder; performing a first densification process on the molybdenum powder through isostatic pressing to obtain a first molybdenum target blank; putting the first molybdenum target blank into a sheath and vacuumizing the sheath; performing a second densification process on the first molybdenum target blank inside the sheath through cold isostatic pressing to form a second molybdenum target blank; after the second densification process, removing the sheath and performing a third densification process on the second molybdenum target blank through induction sintering to form a third molybdenum target blank; after the third densification process, rolling the third molybdenum target blank through hot rolling to form a fourth molybdenum target blank; after the hot rolling process, performing annealing on the fourth molybdenum target blank to obtain the molybdenum target. The manufacturing method of the molybdenum target can help produce full-density molybdenum targets, the uniformity of the internal organizational structure and the size, the purity and the surface dimension of grains of the molybdenum targets can well meet the ever-increasing requirements of the sputtering technology.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to a method for manufacturing a molybdenum target. Background technique [0002] In the electronics industry, the display technology of flat-panel display devices continues to develop. The flat-panel display device formed by molybdenum-deposited emitters has the advantages of wide viewing angle, fast response time, and low power consumption, and has become the main force in the development of flat-panel display devices. Most flat panel display processes use vacuum sputtering to deposit molybdenum on the emitter. [0003] Vacuum sputtering is a process in which electrons accelerate to the substrate under the action of an electric field and collide with argon atoms, ionizing a large number of argon ions and electrons, the electrons fly to the substrate, and the argon ions accelerate to bombard the target under the action of an electric field A large number of target atoms ...

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Problems solved by technology

[0007] The problem solved by the present invention is that the density of the molybdenum target produced by the existing powder metallurgy process is only about 93%, and it is difficult to achieve a full density of more than 99%. The molybdenum target produced by the existing powder metallurgy process The uniformity and grain size of the internal structure of the material cannot meet the increasingly demanding sputtering process; the purity of the molybdenum target produced by the existing powder metallurgy process cannot meet the increasingly high purity requirements of sputtering process; the size of the molybdenum target produced by the existing powder metallurgy process cannot meet the sputtering process with increasing size requirements

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