Semiconductor element and manufacturing method thereof

Abstract

Provided are a semiconductor element and a manufacturing method thereof. The manufacturing method of the semiconductor element comprises the steps of sequentially forming a gate electrode, a gate insulating layer, an oxide semiconductor layer and an etching stop layer on a substrate, wherein the etching stop layer is provided with two contact openings enabling a part of the oxide semiconductor layer to expose; forming a metal layer on the etching stop layer, wherein the metal layer is connected with the oxide semiconductor layer through the contact openings; forming a partly-adjustable type patterning photoresist layer on the metal layer; using the partly-adjustable type patterning photoresist layer as a mask to remove the metal layer being exposed out of the partly-adjustable type patterning photoresist layer and the etching stop layer under the metal layer; decreasing the thickness of the partly-adjustable type patterning photoresist layer till a second portion is completely removed and forming a patterning photoresist layer; using the patterning photoresist layer as a mask to remove the metal layer being exposed out of the patterning photoresist layer and the oxide semiconductor layer and defining a source electrode, a drain electrode and a channel region; removing the patterning photoresist layer.

Description

technical field [0001] The present invention relates to a semiconductor element and its manufacturing method, and in particular to a semiconductor element with an oxide semiconductor layer and its manufacturing method. Background technique [0002] Recently, the awareness of environmental protection has risen, and liquid crystal display panels (Liquid crystal display panels) with superior characteristics such as low power consumption, good space utilization efficiency, no radiation, and high image quality have become the mainstream of the market. In the past, liquid crystal display panels mostly used amorphous silicon (a-Si) thin film transistors or low-temperature polysilicon (Low-temperature polysilicon, LTPS) thin film transistors as switching elements of each pixel structure. However, in recent years, studies have pointed out that: compared with amorphous silicon thin film transistors, oxide semiconductor thin film transistors have higher carrier mobility (mobility); and...

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Problems solved by technology

Furthermore, when the source and drain are subsequently formed, the etchant will cause side etching on the side of the exposed oxide semiconductor layer, which will affect the structural reliability of subsequent products.

In addition, the metal layer defining the source and drain is in contact with the side of the oxide semiconductor layer during deposition. If it is not etched clean in the subsequent etching steps, there will be a risk of increased leakage current or conduction, which will affect the product. electrical reliability

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