Unlock instant, AI-driven research and patent intelligence for your innovation.

Thin film transistor substrate and display device provided with thin film transistor substrate

A technology of thin film transistors and display devices, which is applied to transistors, electric solid-state devices, semiconductor devices, etc., to achieve the effect of increasing aperture ratio and improving stability

Active Publication Date: 2014-02-12
INNOCOM TECH SHENZHEN +1
View PDF6 Cites 8 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Although the amorphous indium gallium zinc oxide thin film transistor has the advantage of being superior to the mobility of the amorphous silicon thin film transistor, and its process is also simpler than that of the crystal silicon thin film transistor, but because the amorphous indium gallium zinc oxide is not suitable for light, water sensitive to oxygen

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Thin film transistor substrate and display device provided with thin film transistor substrate
  • Thin film transistor substrate and display device provided with thin film transistor substrate
  • Thin film transistor substrate and display device provided with thin film transistor substrate

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0039] The thin film transistor substrate and the display device provided with the thin film transistor substrate according to the preferred embodiments of the present invention will be described below with reference to related drawings, wherein the same elements will be described with the same reference symbols.

[0040] First, please refer to Figure 1A Shown is a thin film transistor substrate 1A according to a preferred embodiment of the present invention. The TFT substrate 1A includes a substrate S1 , a gate 11 , a gate dielectric layer 12 , a channel layer 13 , a source 14 , a drain 15 and a light shielding layer 16 . In practice, the substrate S1 can be a light-transmitting material for a transmissive display device, such as glass, quartz or the like, plastic, rubber, glass fiber or other polymer materials, preferably a Borate alkali-free glass substrate (alumino silicate glass substrate). The substrate S1 can also be an opaque material for self-luminous or reflective ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention provides a thin film transistor substrate and a display device provided with the thin film transistor substrate. The thin film transistor substrate includes a substrate body, a grid electrode, a gate dielectric layer, a channel layer, a source electrode, a drain electrode and a light shielding layer, wherein the grid electrode is arranged on the substrate body, the gate dielectric layer is arranged on the grid electrode and the substrate body, and the channel layer is arranged on the gate dielectric layer; the source electrode and the drain electrode are arranged on the channel layer and make contact with the channel layer, and a gap is formed between the drain electrode and the source electrode; the light shielding layer shields the gap; the channel layer includes an oxide semiconductor.

Description

technical field [0001] The present invention relates to a thin film transistor substrate and a display device equipped with the thin film transistor substrate. Background technique [0002] With the advancement of technology, display devices have been widely used in various fields, especially liquid crystal display devices, which have gradually replaced traditional cathode ray tube display devices due to their superior characteristics such as light and thin body, low power consumption and no radiation. And applied to many kinds of electronic products, such as mobile phones, portable multimedia devices, notebook computers, LCD TVs and LCD screens, etc. [0003] As far as liquid crystal display devices are concerned, the known polysilicon thin film transistor has a mobility of about 100 cm2 / Vs, but it must be manufactured at a temperature above 450 ° C, so it can only be formed on a substrate with high heat resistance. Not suitable for large area or flexible substrates. In a...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/786H01L23/552
CPCH01L29/7869H01L23/552
Inventor 沈宏明黄婉玲杨凯能谢朝桦
Owner INNOCOM TECH SHENZHEN