SiC single crystal and method for manufacturing same, SiC wafer, and semiconductor device

Abstract

When a SiC single crystal having a large {0001} face diameter is manufactured by repeating an a-face growth, the SiC single crystal is grown on the a-face so that the ratio (Sfcaet) of the area (S1) of a Si-face side facet region to the total area (S2) of the growth face (Sfcaet = S1 × 100 / S2) is maintained at 20 % or less. It is preferable that the a-face growth is performed by a {11-20} face selection growth method in which the a-face growth is repeated in approximately 60° or 120° different direction with reference to the {11-20} face or an alternate growth method in which {11-20} face growth and {1-100} face growth are alternately repeated.

Description

technical field [0001] The invention relates to SiC single crystal and its manufacturing method, SiC wafer and semiconductor device. More specifically, the present invention relates to a SiC single crystal containing few crystal masses of different orientations or few heterogeneous polytype crystal masses, a method of manufacturing the same, and SiC wafers and semiconductor devices cut out from the SiC single crystal. Background technique [0002] In SiC (silicon carbide), a high-temperature type (α type) having a hexagonal crystal structure and a low-temperature type (β type) having a cubic crystal structure are known. Compared with Si, SiC is characterized by high heat resistance, wide bandgap, and high dielectric breakdown electric field strength. For this reason, semiconductors including SiC single crystals are expected to be candidate materials for next-generation power devices replacing Si semiconductors. In particular, α-type SiC has a wider band gap than β-type SiC...

AI Technical Summary

Problems solved by technology

[0025] (2) the occurrence of lamination defects during a-plane growth cannot be avoided; and

[0031] (3) When the deviation angle relative to the (000-1) C plane direction is too large, it is easy to produce a mixture of polytypes and produce a large number of crystal defects

Therefore, the final yield when cutting out {0001} plane substrates decreases, and it is difficult to cut out large-diameter substrates

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