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Transparent conducting thin film

A technology of transparent conductive film and thin film transistor, which is used in circuits, electrical components, semiconductor devices, etc., to achieve the effect of good visible light transmittance

Inactive Publication Date: 2014-02-19
BEIJING INSTITUTE OF TECHNOLOGYGY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Although ITO films have higher visible light transmittance and better conductivity, for large-scale, high-resolution and transparent displays, the resistivity of electrodes made of fine ITO films becomes higher; in addition, other When used for thin film transistor electrodes, ohmic contacts with low contact resistance cannot be formed, which affects the electrical characteristics of thin film transistors

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Embodiment Construction

[0042] The following is a further introduction with illustrations and examples:

[0043] In the present invention, indium gallium zinc oxide is amorphous InGaZnO 4 Thin films are prepared by magnetron radio frequency sputtering, indium gallium zinc oxide (In:Ga:Zn:O molar ratio is 1:1:1:4). The target is used as the raw material of the film; manganese oxide is MnO or MnO 2 or Mn 3 o 4 The thin films are prepared by direct current sputtering of high-purity manganese targets, and then obtained by high-temperature annealing in an oxygen environment; the copper metal layer is prepared by magnetron direct current sputtering, and high-purity copper targets are used as film raw materials.

[0044] An application example of the transparent conductive film proposed by the present invention is to be used as an electrode (source, gate, drain) of an indium gallium zinc oxide thin film transistor, thereby making a transparent indium gallium zinc oxide thin film transistor device, such as...

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Abstract

The invention provides a transparent conducting thin film of an oxide-metal-oxide sandwich structure on the basis of the principle of an induction transmission optical filter in thin film optics. The transparent conducting thin film is used as electrodes (containing a source electrode, a drain electrode and a grid electrode) of an IGZOTFT. Oxide layers of the transparent conducting thin film are IGZO and manganite composite layers. A metal layer is made of metal Cu. Manganite is located between the metal Cu layer and the IGZO layer, the adhesion of the Cu layer and the adhesion of the IGZO layer are increased, and Cu is prevented from diffusing to the IGZO layer. When transparent conducting thin film is used as the source electrode, the drain electrode and the grid electrode of the IGZOTFT, the transparent conducting thin film and an active layer of the IGZOTFT can form ohmic contact with the low contact resistance, so that the IGZOFT has the good light permeability and electrical characteristics.

Description

[0001] Technical field: [0002] The invention relates to the technical fields of flat panel display technology, thin film solar cells, thin film transistors, etc., in particular to a transparent conductive film. [0003] Background of the invention: [0004] TFT (Thin Film Transistor, Thin Film Transistor)-LCD (Liquid Crystal Display, liquid crystal display) and AMOLED (Active Matrix / Organic Light Emitting Diode, active matrix organic light emitting diode panel) are the current and future mainstream display technologies. It belongs to active drive display, and its panel structure includes three main components: display unit, array backplane and carrier substrate. The TFT array backplane is the core component of an actively driven display. Each pixel on an active drive display is driven by an integrated thin-film transistor, thereby realizing high-speed, high-brightness, high-contrast information display. [0005] Transparent display technology is to make TFT-LCD and A...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/43H01L29/45H01L29/786
CPCH01L29/4908H01L29/7869
Inventor 喻志农李旭远张世玉蒋玉蓉薛唯
Owner BEIJING INSTITUTE OF TECHNOLOGYGY