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Phase change memory and formation method thereof
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A phase-change memory and phase-change layer technology, applied in electrical components and other directions, to achieve the effects of small driving current, large cross-sectional area and superior performance
Active Publication Date: 2014-02-19
SEMICON MFG INT (SHANGHAI) CORP
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[0010] However, the performance of the phase-change memory formed by the prior art still needs to be improved. For more information about the phase-change memory and its formation method, please refer to the US patent with the publication number "US20020319751"
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no. 1 example
[0051] Please refer to Figure 5 , the method for forming the phase change memory according to the first embodiment of the present invention, comprising:
[0052] Step S201, providing a substrate, a first insulating layer is formed on the surface of the substrate, and an opening is formed in the first insulating layer;
[0053] Step S202, forming a first conductive layer in the opening, the first conductive layer covering the bottom and sidewalls of the opening;
[0054] Step S203, forming a second conductive layer at the bottom of the opening, the second conductive layer is located on the surface of the first conductive layer, and the surface of the second conductive layer is lower than the surface of the first insulating layer;
[0055] Step S204, using an ion implantation process to implant ions into the first conductive layer, so that part of the first conductive layer forms a second insulating layer, and the remaining part of the first conductive layer and the second con...
example 1
[0076] Please refer to Figure 12 , Figure 12 shows the Figure 10 in the first conductive layer 305 ( Figure 10 (shown) is a schematic diagram after performing an ion implantation process.
[0077] The area ratio between the second insulating layer 305a and the remaining first conductive layer 305b is 1:3-1:5. The remaining first conductive layer 305 b and the second conductive layer 307 together form the bottom electrode layer 309 . Subsequently, the contact area between the bottom electrode layer 309 and the phase change layer decreases, the contact resistance between the two becomes larger, the time required for phase change of the phase change layer decreases, and the read / write rate of the phase change memory increases.
example 2
[0079] Different from Example 1 of the first embodiment of the present invention, in Example 2, the first conductive layer 305 (such as Figure 10 shown) performed 2 ion implantation processes.
[0080] Please refer to Figure 13 , after completing the first ion implantation process, the substrate 300 ( Figure 9 shown) rotated 90 degrees to perform the second ion implantation process.
[0081] The second insulating layer 305a formed in Example 2 is connected into one piece, and the area ratio of the second insulating layer 305a to the remaining first conductive layer 305b is about 1:1. The area of the remaining first conductive layer 305b is smaller than that in Example 1.
[0082] Please refer to Figure 14 , after completing the first ion implantation process, the substrate 300 ( Figure 9 Shown) rotated 180 degrees to perform the second ion implantation process. Slightly different from rotating the substrate 300 by 90 degrees, this method forms two second insulatin...
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Abstract
The invention provides a phase change memory and a formation method thereof. The formation method of the phase change memory comprises the following steps: providing a substrate, wherein a first insulation layer is formed on the surface of the substrate and an opening is formed in the first insulation layer; forming a first conductive layer covering the side wall of the opening; injecting ions to the first conductive layer by utilizing ion implantation technology so as to enable a part of the first conductive layer to form a second insulation layer, and the rest first conductive layer to form a bottom electrode layer, wherein the surfaces of the second insulation layer and the bottom electrode layer are flush with the surface of the first insulation layer; after the bottom electrode layer is formed, forming a third insulation layer in the opening, wherein the surface of the third insulation layer is flush with the surface of the first insulation layer; forming a phase change layer on the surfaces of the first insulation layer, the second insulation layer, the third insulation layer and the bottom electrode layer respectively; and forming a top electrode layer on the surface of the phase change layer. The contact area of the formed bottom electrode layer and the phase change layer of the phase change memory is small, and the power consumption of the phase change memory is low.
Description
technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to a phase-change memory and a forming method thereof. Background technique [0002] As an emerging non-volatile storage technology, phase change memory has greater advantages over flash memory FLASH in many aspects such as read and write speed, read and write times, data retention time, cell area, and multi-value implementation. It has become the focus of current research on non-volatile storage technology. The continuous progress of phase change memory technology makes it a mainstream product in the future non-volatile memory technology market. [0003] In phase-change memory (PCRAM), the value of the memory can be changed by heat-treating the phase-change layer on which data is recorded. The phase change material constituting the phase change layer enters a crystalline state or an amorphous state due to the heating effect of an applied electric current. When the phas...
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