Method for preparing metal conductive film

A metal conductive and thin film technology, applied to conductive layers, circuits, electrical components and other directions on insulating carriers, can solve the problems of over-sintering, difficult control, low cost, high-efficiency silver nanowire conductive film adhesion and conductivity, etc. problem, to achieve the effect of improving adhesion, improving adhesion, and improving adhesion

Active Publication Date: 2014-02-26
FUDAN UNIV
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Problems solved by technology

Using a high-energy source, although the conductivity of the film is improved and the efficiency is high, it only takes a few microseconds, but it is prone to over-sintering. Usually, the peak point of conductivity is also the point where the conductivity begins to decline, so it is difficult to operate in practice. control
[0005] So far, there is no effective, low-cost, high-efficiency method that can simultaneously improve the adhesion and conductivity of silver nanowire conductive films.

Method used

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  • Method for preparing metal conductive film
  • Method for preparing metal conductive film
  • Method for preparing metal conductive film

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Embodiment Construction

[0051] In order to make the object, technical solution and advantages of the present invention clearer, various embodiments of the present invention will be described in detail below in conjunction with the accompanying drawings. However, those of ordinary skill in the art can understand that, in each implementation manner of the present invention, many technical details are provided for readers to better understand the present application. However, even without these technical details and various changes and modifications based on the following implementation modes, the technical solution claimed in each claim of the present application can be realized.

[0052] The first embodiment of the present invention relates to a method for preparing a metal conductive film. Such as figure 1 Shown is the flow chart of the method for preparing metal conductive thin film in this embodiment mode, will combine below figure 1 The whole preparation process is introduced in detail.

[0053...

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Abstract

The invention relates to the field of an electronic material and discloses a method for preparing a metal conductive film. The method comprises: first of all, respectively preparing a sea alginate aqueous solution and a metal particle dispersion liquid; then coating the sea alginate aqueous solution on a substrate; then coating the metal particle dispersion liquid on the substrate so as to prepare a metal conductive film; immersing the substrate coated with the metal conductive film into an inorganic salting liquid; and finally cleaning the metal conductive film by use of deionized water after the substrate is taken out of the inorganic salting liquid. Compared to the prior art, the method for preparing the metal conductive film improves the adhesiveness between the metal conductive film and the substrate while increasing the conductivity of the metal conductive film by 1-4 times. Besides, the process temperature is low, the operation process is simple, and the cost is low.

Description

technical field [0001] The invention relates to the field of electronic materials, in particular to a method for preparing a metal conductive film, especially a method for preparing a metal transparent conductive film. Background technique [0002] Transparent conductive films have good electrical conductivity and high light transmittance in the visible range, and are widely used in flat panel displays, thin-film solar cells, sensors, touch screens, and stretchable electronics. Based on conductivity considerations, metal transparent conductive films, especially silver nanowire transparent conductive films, are one of the most promising candidates to replace commercial indium tin oxide ITO. However, because the silver nanowires are usually wrapped with a layer of stabilizer with a decomposition temperature as high as 350-400 degrees, such as polyvinylpyrrolidone (PVP), the contact resistance between the wires is relatively large, and usually requires a high temperature treatm...

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01B13/00H01B5/14
Inventor 金云霞肖斐
Owner FUDAN UNIV
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