A high voltage esd protection device with small hysteresis scr structure of zener breakdown

Abstract

A high-voltage ESD protection device with small hysteresis SCR structure of zener breakdown, which can be used for high-voltage ESD protection circuits of on-chip ICs. Including P-type substrate, N-type buried layer, first N well, P well, sinking P doping, second N well, isolation region, first N+, first P+, second N+, second P+, second Three N+, third P+, fourth N+, fourth P+, fifth N+, fifth P+, metal anode, metal cathode. Among them, the first metal anode, metal cathode, first N+, first P+, third N+, third P+, second N+, second P+ or the second metal anode, metal cathode, fifth N+, fifth P+ , the third N+, the third P+, the fourth N+, and the fourth P+ constitute a zener breakdown ESD current discharge path. The Zener breakdown ESD current discharge path can not only enhance the ESD robustness of the device, but also increase the holding voltage of the device, which is suitable for high-voltage ESD protection with a narrow ESD window.

Description

technical field [0001] The invention belongs to the field of electrostatic protection of integrated circuits and relates to a high-voltage ESD protection device, in particular to a high-voltage ESD protection device with small hysteresis SCR structure of Zener breakdown, which can be used to improve the reliability of on-chip IC high-voltage ESD protection. Background technique [0002] With the rapid development of power integration technology, electronic products are increasingly miniaturized, making it easier for people to carry and use them daily. However, with the increasing demand for electronic products such as mobile hard disks, flash memory cards, USB interfaces, and smart phone display touch screens, the reliability problems of integrated circuit products have become increasingly prominent. For example, the data of the flash memory card cannot be read suddenly, the USB interface cannot carry out data communication, and the unreliability problems such as the sudden ...

AI Technical Summary

Problems solved by technology

The high-voltage ESD protection at the interface of the power integrated circuit in the above-mentioned electronic products is a major technical difficulty in the ESD protection design of the entire circuit system

Most of the current high-voltage ESD protection devices are difficult to meet the many requirements of power integrated circuits for high-voltage ESD protection devices: for example, high-voltage ESD protection devices must have a sustain voltage higher than the operating voltage and a breakdown voltage lower than the gate oxide as much as possible trigger voltage, and must also pass the ESD robustness test standard of IEC6001-4-2

In short, the existing high-voltage ESD protection lacks robust ESD protection devices that can meet the narrow ESD window

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