Ultrashort pulse all-fiber laser device

Abstract

The invention relates to an ultrashort pulse all-fiber laser device. The ultrashort pulse all-fiber laser device comprises a nanosecond pulse direct modulation semiconductor laser device, an optical fiber preamplifier, an optical fiber main amplifier, a pulse selector and an ultrashort pulse output end, wherein the nanosecond pulse direct modulation semiconductor laser device is connected into ultrashort pulse output end sequentially through the optical fiber preamplifier, the optical fiber main amplifier and the pulse selector, and the nanosecond pulse direct modulation semiconductor laser device is connected with the pulse selector. The ultrashort pulse all-fiber laser device is little influenced by temperature fluctuations and is high in power output, and repetition frequency can be adjusted freely.

Description

technical field [0001] The invention belongs to the field of fiber lasers, and relates to an ultrashort pulse all-fiber laser, in particular to an all-fiber laser capable of real-time arbitrarily adjustable repetition rate and high stability ultrashort pulse output. Background technique [0002] Ultrashort pulse laser is a type of laser that is widely used. Its main feature is that the pulse width of the output laser is very narrow, usually on the order of picoseconds and femtoseconds. At present, the methods that can generate ultrashort pulse laser mainly include mode-locked laser technology, gain-switched semiconductor laser technology and laser intensity modulation technology. Mode-locked laser technology is the most common technology for obtaining ultrashort pulse laser output. It locks the longitudinal mode with a fixed phase relationship in the laser cavity to obtain ultrashort pulse output in terms of intensity, and can obtain extremely narrow pulse width. However, t...

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Problems solved by technology

Mode-locked laser technology is the most common technology for obtaining ultrashort pulse laser output. It locks the longitudinal mode with a fixed phase relationship in the laser cavity to obtain ultrashort pulse output in terms of intensity, and can obtain extremely narrow pulse width. However, the repetition frequency of the laser pulse output in this way cannot be easily changed, and the mode-locking requires relatively harsh environmental conditions. Temperature changes and vibrations will affect the output of the mode-locked laser pulse.

Gain-switched semiconductor laser technology is to modulate the semiconductor laser with electrical pulses, and select the first peak of the relaxation oscillation of the semiconductor laser to obtain ultrashort pulse output. This technology can obtain ultrashort pulse output with adjustable repetition rate. However, the pulse width of the output laser pulse is wide and the power is very low

The laser intensity modulation technology uses a high-speed intensity modulator to modulate the intensity of the continuously output laser to obtain an ultrashort pulse output. The laser pulse repetition frequency obtained by this technology is adjustable, but the pulse width is wider and the output power is lower.

It can be seen that the above three existing technologies cannot simultaneously realize ultrashort pulse laser output with arbitrarily adjustable repetition frequency, high power, and high stability.

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