High-electronic-mobility transistor with improved grid electrode

Abstract

The invention relates to a high-electronic-mobility transistor with an improved grid electrode. The high-electronic-mobility transistor with the improved grid electrode is used for high-power switch and amplification. When a high-electronic-mobility transistor and a microwave integrated circuit and an interchange circuit comprising the transistor are manufactured, nickel-chromium alloy or tungsten-nickel alloy is adopted as the materials of a first grid electrode layer to passivate oxygen or water molecules which cannot be removed and have been already adsorbed and diffused on the surface of a composite epitaxy channel layer in the vacuum pumping process executed before grid electrode deposition, and therefore the functions and stability of the high-electronic-mobility transistor and the microwave integrated circuit and the interchange circuit made of the transistor are improved.

Description

technical field [0001] This invention relates to a high electron mobility transistor for power switching and microwave amplification, and more specifically to a gate of a high electron mobility transistor to enhance the operation of the transistor. Background technique [0002] In order to electronically switch and amplify low-frequency electrical signals below about gigahertz (1 GHz), most circuits use metal-oxide-semiconductor-field-effect transistors (MOSFETs) or bipolar transistors made on silicon substrates or substrates (BJT). When the frequency is higher than 1 gigahertz into microwave and millimeter waves, the above silicon-based devices are generally not suitable for switching or amplifying these electrical signals, and thus are not suitable for applications in the microwave and millimeter wave range. This is because the charge mobility (electron mobility) in silicon semiconductors is low, 1000cm before making a device 2 / V-sec, but it is lower than this value aft...

AI Technical Summary

Problems solved by technology

Any slight deformation of the gate or local peeling of the gate from the channel layer can lead to functional degradation of the gate. These degradations may cause incompleteness or discontinuity of contact between the gate and the channel semiconductor layer, thereby weakening the gate. Modulation efficiency for the channel

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