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Method for determining interstitial oxygen concentration

A technology of interstitial oxygen and concentration, which is used in spectrum investigation, material thermal analysis, instruments, etc., can solve the problems of substrates that can no longer be used, difficult to apply substrates, and difficult to remove.

Inactive Publication Date: 2014-03-05
COMMISSARIAT A LENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
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  • Description
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  • Application Information

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Problems solved by technology

Such contacts are difficult to remove without damaging or contaminating the sample material
[0010] Due to the complexity of such characterization methods, the measurement techniques of the aforementioned papers are slow and difficult to apply to microelectronic and photovoltaic substrates
[0011] Furthermore, once the measurements have been performed, the preparation and hydrogenation of the substrate renders the substrate unusable

Method used

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  • Method for determining interstitial oxygen concentration
  • Method for determining interstitial oxygen concentration
  • Method for determining interstitial oxygen concentration

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Embodiment Construction

[0025] In a p-type doped silicon substrate, the free charge carriers are holes. Their number depends on the concentration of implanted dopant impurities in the silicon N A , the dopant impurity is usually a boron atom (B). Such atoms are called electron acceptors.

[0026] When the substrate is mainly doped with boron, the hole concentration p 0 Equal to boron concentration: p 0 =N A =[B].

[0027] When the substrate also includes up to a non-negligible concentration of N D The initial concentration of free holes, p 0 Equal to acceptor atomic concentration N A Subtract the donor atomic concentration N D :p 0 =N A -N D . This relationship is valid if the acceptor and donor atoms are only ionized once. For donor and / acceptor atoms that ionize several times, the degree of ionization is applied at the concentration N A and / or N D (p 0 =αN A -βN D ).

[0028] Subjecting the substrate to a temperature comprised between 200°C and 500°C will result in the formation ...

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Abstract

The invention relates to a method for determining the interstitial oxygen concentration of a sample made of a p-doped semiconductor material, which includes a step of thermal treatment (F1) of the sample in order to form thermal donors, determining (F1) the thermal treatment time (t) required to obtain a compensated semiconductor material, determining (F2) the concentration of thermal donors (NDDT) in the sample made of compensated semiconductor material, from the concentration of charge carriers (po), and determining (F3) the oxygen concentration (Co) from the concentration of thermal donors (NDDT) and the thermal treatment time (t).

Description

technical field [0001] The present invention relates to a method for determining the interstitial oxygen concentration of a p-type doped semiconductor sample. Background technique [0002] Silicon substrates intended for use in the microelectronics industry or for photovoltaic applications contain oxygen. When they are in the form of precipitates, oxygen atoms generally occupy interstitial positions in the crystal lattice. In the case of monocrystalline silicon obtained by the Czochralski method, or in the case of solar-grade polysilicon, the interstitial oxygen concentration is between 10 17 and 2.10 18 atom / cm 3 change between. [0003] interstitial oxygen (O i ) has a great influence on the mechanical and electrical properties of silicon. In particular, in the temperature range between 200°C and 500°C, oxygen forms precipitates called thermal double donors (TDD), which change the electrical properties of the material. At higher temperatures, the oxygen forms other ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01N25/00G01N27/04H01L21/66
CPCG01J3/42H01L22/12H01L21/3225G01N27/125G01N25/00G01N27/04H01L22/00G01N27/041
Inventor J.维尔曼S.杜博伊斯N.恩加尔波特
Owner COMMISSARIAT A LENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
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