Method for determining interstitial oxygen concentration

A technology of interstitial oxygen and concentration, which is used in spectrum investigation, material thermal analysis, instruments, etc., can solve the problems of substrates that can no longer be used, difficult to apply substrates, and difficult to remove.
CN103620394AInactive Publication Date: 2014-03-05COMMISSARIAT A LENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
8 Cites 1 Cited by

Patent Information

Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
COMMISSARIAT A LENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
Publication Date
2014-03-05
Estimated Expiration
Not applicable · inactive patent

Smart Images

  • Figure 1
    Figure 1
  • Figure 2
    Figure 2
  • Figure 3
    Figure 3
Patent Text Reader

Abstract

The invention relates to a method for determining the interstitial oxygen concentration of a sample made of a p-doped semiconductor material, which includes a step of thermal treatment (F1) of the sample in order to form thermal donors, determining (F1) the thermal treatment time (t) required to obtain a compensated semiconductor material, determining (F2) the concentration of thermal donors (NDDT) in the sample made of compensated semiconductor material, from the concentration of charge carriers (po), and determining (F3) the oxygen concentration (Co) from the concentration of thermal donors (NDDT) and the thermal treatment time (t).
Need to check novelty before this filing date? Find Prior Art

Description

technical field

[0001] The present invention relates to a method for determining the interstitial oxygen concentration of a p-type doped semiconductor sample. Background technique

[0002] Silicon substrates intended for use in the microelectronics industry or for photovoltaic applications contain oxygen. When they are in the form of precipitates, oxygen atoms generally occupy interstitial positions in the crystal lattice. In the case of monocrystalline silicon obtained by the Czochralski method, or in the case of solar-grade polysilicon, the interstitial oxygen concentration is between 10 17 and 2.10 18 atom / cm 3 change between.

[0003] interstitial oxygen (O i ) has a great influence on the mechanical and electrical properties of silicon. In particular, in the temperature range between 200°C and 500°C, oxygen forms precipitates called thermal double donors (TDD), which change the electrical properties of the material. At higher temperatures, the oxygen forms other ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More