Dual sealing structure for ultra high temperature double-layer water cooling quartz tube vacuum chamber

Abstract

The invention discloses a dual sealing structure for an ultra high temperature double-layer water cooling quartz tube vacuum chamber. The dual sealing structure comprises a double-layer quartz tube nested structure, and stainless steel sealing assemblies respectively nested at two ends of the double-layer quartz tube nested structure; the double-layer quartz tube nested structure comprises an outer layer quartz tube and an internal layer quartz tube embedded in the outer layer quartz tube, and a ring-shaped cavity is formed between the outer layer quartz tube and the internal layer quartz tube; each stainless steel sealing assembly comprises a first stainless steel flange plate, a first stainless steel fastening circular ring, a second stainless steel flange plate and a second stainless steel fastening circular ring which are matched mutually, wherein a stainless steel cover is detachably mounted at the outer side of the second stainless steel flange plate; a water cooling port communicated with the ring-shaped cavity is formed in each stainless steel sealing assembly; a leaked water vapor vacuum isolation region is formed between the inner wall of each second stainless steel flange plate and the outer wall of the internal layer quartz tube, and the second stainless steel flange plate is provided with an exhaust tube communicated with the leaked water vapor vacuum isolation region. The dual sealing structure can achieve ultra high temperature, has excellent sealing property, and is safe and reliable.

Description

Technical field: [0001] The invention relates to the technical field of high-temperature equipment for manufacturing silicon carbide, in particular to a double-seal structure for an ultra-high-temperature double-layer water-cooled quartz tube vacuum chamber that can reach ultra-high temperatures, has excellent sealing performance, and is safe and reliable. Background technique: [0002] Silicon carbide (SiC) is an important wide-bandgap semiconductor material, which has great application potential in the fields of high-temperature, high-frequency and high-power devices. Compared with traditional silicon (Si) materials, SiC has obvious advantages, for example, its forbidden band width is 3 times that of Si, the saturation electron drift rate is 2.5 times that of Si, and the breakdown electric field is 10 times that of Si. High-quality SiC substrates and epitaxial materials are prerequisites for the preparation of high-performance SiC power devices. [0003] SiC material has ...

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Problems solved by technology

[0005] However, due to the limited temperature resistance of the quartz tube itself, the temperature resistance of the single-layer quartz tube vacuum chamber is lower than 1800 ° C, and for the welded quartz tube chamber, the welding technology requirements are high, and the quartz tube is easily deformed, and there may be internal stress. There are security risks

Obviously, the existing vacuum chamber structure can no longer meet the requirements of SiC material growth and device preparation.

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