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Method for distinguishing Si surface from C surface of SiC (silicon carbide) wafer

A silicon carbide crystal and silicon carbide technology, which is applied in measuring devices, instruments, scanning probe microscopy, etc., can solve the problems of insufficient roundness, many defects, and high cost in the single crystal area of ​​the ingot, so as to improve the production efficiency. , The effect of improving crystal quality and reducing cost

Inactive Publication Date: 2014-03-12
HEBEI SYNLIGHT CRYSTAL CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The disadvantage of this method is that two directional grinding of the positioning edge is required. In order to distinguish the primary and secondary positioning edges, the main positioning edge must be ground to twice the length of the secondary positioning edge, which costs money and damages the crystal ingot. Another disadvantage is that using this method The single crystal area of ​​the ingot where the wafer is used as the seed crystal is not round enough and there are more defects near the main and auxiliary positioning edges than other areas. Moreover, once the wafer breaks, it is difficult to distinguish its polarity by this method.

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0026] The silicon carbide wafer after the mechanical polishing is used with 15% hydrogen peroxide (H 2 O 2 ) SiO 2 The sol is chemically polished for 4 hours; the surface of the chemically polished silicon carbide wafer is tested with an atomic force microscope. The mode is tapping mode, the frequency is 1HZ, the test range is 10×10μm, and the resolution is 256×256, which is displayed on the atomic force microscope. The roughness value of the tested surface is shown; the scratches and pits of the atomic force microscopy are large and wide, the edges are gentle, and the roughness is 1.89m, so the tested surface is a carbon surface.

Embodiment 2

[0028] The silicon carbide wafer after the mechanical polishing is used with 15% hydrogen peroxide (H 2 O 2 ) SiO 2 The sol is chemically polished for 4 hours; the surface of the chemically polished silicon carbide wafer is tested with an atomic force microscope. The mode is tapping mode, the frequency is 1HZ, the test range is 10×10μm, and the resolution is 256×256, which is displayed on the atomic force microscope. The roughness value of the tested surface is shown; the scratches or pits of the atomic force microscopy are small and narrow, the edges and corners are obvious, the background is clear, and the roughness is 0.26nm, so the tested surface is a silicon surface.

Embodiment 3

[0030] The silicon carbide wafer after the mechanical polishing is used with 15% hydrogen peroxide (H 2 O 2 ) SiO 2 The sol is chemically polished for 4 hours; the surface of the chemically polished silicon carbide wafer is tested with an atomic force microscope. The mode is tapping mode, the frequency is 1HZ, the test range is 10×10μm, and the resolution is 256×256, which is displayed on the atomic force microscope. The roughness value of the tested surface is shown; the scratches and pits of the atomic force microscopy are large and wide, the edges are gentle, and the roughness is 2.14nm, so the tested surface is a carbon surface.

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Abstract

The invention relates to a method for distinguishing the Si surface from the C surface of a SiC (silicon carbide) wafer, which comprises the following steps: after being subjected to mechanical elaborate polishing, the SiC wafer is subjected to chemical polishing; after the SiC wafer is subjected to chemical polishing, an atomic force microscope is used for testing the surface of the SiC wafer, and a roughness value of the tested surface is displayed on the atomic force microscope; if the displayed roughness value is between 0.10-0.50nm, the tested surface is the Si surface; if the displayed roughness value is between 0.80-3.00nm, the tested surface is the C surface. The method has the characteristics that no additional process is needed, the wafer is not damaged, the cost is greatly lowered, the wafer production efficiency is improved, and the operation is simple and safe; meanwhile, a positioning edge can be saved, crystal defects generated by regeneration can be reduced, the crystal quality can be improved, and the SiC wafer is matched with a first generation semiconductor silicon single crystal wafer in geometric dimension standard.

Description

Technical field [0001] The invention relates to a method for identifying the silicon carbon surface of a silicon carbide wafer, and belongs to the field of silicon carbide wafer manufacturing. Background technique [0002] SiC, as the representative of the third-generation wide band-gap (Wide Band-gap Semiconductor, WBS) semiconductor material, has wide band gap, high critical breakdown electric field, high thermal conductivity, high carrier saturation drift speed and excellent chemical stability It has huge application potential in the fields of optoelectronics and microelectronics. [0003] The application of SiC wafers grown by the PVT method is extremely wide. Both the seed crystal used for growing single crystals and the amount of substrate required for epitaxy are in short supply. These applications have very strict requirements on the polarity of the growth surface. [0004] Silicon carbide (SiC) single wafers have two polar surfaces, silicon (Si) plane and carbon (C) plane. ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01Q60/24G01Q30/20
Inventor 陶莹高宇邓树军赵梅玉段聪
Owner HEBEI SYNLIGHT CRYSTAL CO LTD