A packaging method for semiconductor laser array single chip

Abstract

The invention discloses a packaging method of a semiconductor laser array single chip. The packaging method comprises the following steps: 1) an aluminum nitride heat radiating fin is cut according to size of a semiconductor laser bar; 2) the aluminum nitride heat radiating fin and an oxygen-free copper heat sink block are welded together, and the aluminum nitride heat radiating fin are cut according to a single chip arrangement period so that an electrical insulating groove is formed; 3) the aluminum nitride heat radiating fin, a welding material and the bar are pressed together by using a mechanical clamp and an aluminum oxide ceramic pad and then arranged in a high-temperature backflow furnace to weld; 4) the bar is cut by using a high-speed rotary cutting piece along direction of the electrical insulating groove so that a chip on the bar is changed into independent single chips; and 5) a cathode of one single chip is connected with an anode gold wire of the adjacent single chip by using a wire bonding machine, and the cathode of one end of the integrated chip and the anode of the other end are respectively connected with an electrode piece of the oxygen-free heat sink block so as to be preparedly connected with an external power supply. The packaging method is long in the service life, simple in process, small in volume, great in stability, high in power and wide in application.

Description

technical field [0001] The invention relates to the field of lasers, in particular to a packaging method for converting a semiconductor laser bar into an array single chip. Background technique [0002] Semiconductor lasers have many advantages such as small size, light weight, and high efficiency, and are widely used in many fields such as industry, military, medical, and communication. As the application field requires higher and higher laser power density, especially the power density after laser beam shaping, high-power semiconductor laser fiber coupling devices appear and develop rapidly. At present, the fiber coupling of semiconductor lasers is mainly realized by two technical routes: 1. The standard 10mm bar of the semiconductor laser is collimated and shaped, and then coupled into the optical fiber; 2. The beam is collimated after the semiconductor laser single-chip mechanical combination Straight, shaped and then coupled into the fiber. The use of bars to achieve ...

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Problems solved by technology

However, indium is easily oxidized, and it is prone to electromigration and electrothermal migration problems under high current, which greatly reduces the reliability of semiconductor laser devices

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