Apparatus and method for purifying yellow phosphorus

A purification device and oxidation device technology, applied in chemical instruments and methods, phosphorus compounds, inorganic chemistry, etc., can solve the problems that it is difficult to achieve ideal and economical results, complex impurity components of industrial yellow phosphorus, and limited purification effect, etc. Achieve continuous production operation, not easy to leak, improve the effect of purity

Inactive Publication Date: 2014-03-19
WENGFU (GRP) CO LTD
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Problems solved by technology

However, due to the complexity of yellow phosphorus impurities, the reported chemical and physical methods to remove arsenic in yellow phosphorus are facing problems such as low phosphorus recovery rate and limited purification effect.
[0008] The impurity composition of industrial yellow phosphorus is very complex. It is difficult to achieve ideal and economical results by using a single method. Therefore, multiple purification methods must be used to couple

Method used

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  • Apparatus and method for purifying yellow phosphorus

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Embodiment

[0029] A yellow phosphorus purification device, including an oxidation device, a washing device, an area melting device and a filtering device;

[0030] The oxidation device includes a phosphorus melting tank 7 and an oxidation tank 3; the top of the phosphorus melting tank 7 is provided with a yellow phosphorus inlet 2, the bottom of the phosphorus melting tank 7 is provided with a yellow phosphorus outlet 6, and the outer layer of the phosphorus melting tank 7 is provided with Insulation jacket, the lower part of the insulation jacket is provided with an insulation fluid inlet 1, and an insulation fluid outlet 5 is provided on the opposite side of the insulation jacket insulation fluid inlet; the top of the oxidation tank 3 is respectively provided with an oxidation tank yellow phosphorus inlet 21 , oxidant inlet 22, catalyst inlet 23, nitrogen inlet 24 and tail gas outlet 25; The bottom of described oxidation tank 3 is provided with oxidation tank yellow phosphorus outlet 38...

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Abstract

The invention discloses an apparatus and a method for purifying yellow phosphorus. The method comprises: fully replacing air in an oxidation tank, respectively adding an oxidant, a catalyst and yellow phosphorus, reacting for 1-3 h, and standing for layering; adding yellow phosphorus into zone melting equipment, wherein yellow phosphorus is melt in a divisional manner, gradually transfers to the two ends of a divisional-melting pool and respectively goes into a high-purity yellow phosphorus tank and a low-arsenic yellow phosphorus tank; and enabling yellow phosphorus coming from the high-purity yellow phosphorus tank to be pressed into a phosphorus pressing tank and go into a filter for filtering, and enabling filtered yellow phosphorus to enter a finished product storage system. According to the technical scheme, yellow phosphorus is purified by employing oxidation, washing, divisional melting and filtering, so that the purity of phosphorus is improved and the quality of yellow phosphorus is not influenced.

Description

technical field [0001] The invention relates to a yellow phosphorus purification device, in particular to a high-purity yellow phosphorus production device. Background technique [0002] In addition to arsenic, industrial yellow phosphorus also contains mechanical impurities, inorganic impurities and organic matter. These impurities mainly include: [0003] Metal elements: Ca, Fe, Al, Mg, Sr, Mn, Na, K, Ti, V, Cr, Ni, Ga, Cd, Cu, Sb, Pb, Zn, Sn, U. [0004] Semi-metal elements: Se, Si, C, B, As, Bi. [0005] Organic matter: more than 30 kinds of phenol, anthracene, tar and polyatomic polycyclic aromatic hydrocarbons. [0006] Because industrial yellow phosphorus contains the above-mentioned impurities, it seriously affects its application range, and high-purity phosphorus chemical products are widely used. Taking high-purity phosphorus as an example, InP and GaP are important raw materials in the electronics industry, and are doped in planar epitaxial transistors and int...

Claims

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Application Information

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IPC IPC(8): C01B25/047
Inventor 王邵东王平申齐吴邦文
Owner WENGFU (GRP) CO LTD
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