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A method for improving HSP PSG technology and a method for producing a pre-metal dielectric layer

A process and pre-deposition technology, applied in semiconductor/solid-state device manufacturing, circuits, electrical components, etc., can solve the problems of unfavorable process online control product performance stability, PSG film phosphorus content decline, etc.

Active Publication Date: 2014-03-19
SHANGHAI HUALI MICROELECTRONICS CORP
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] However, when using the Lam supplier's SPEED machine to do the HDP PSG process, due to its complexity, the actual process pressure will have an upward trend, resulting in a downward trend in the phosphorus content of the PSG film
The trend of this process is not conducive to the on-line control of the process and the stability of product performance

Method used

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  • A method for improving HSP PSG technology and a method for producing a pre-metal dielectric layer
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  • A method for improving HSP PSG technology and a method for producing a pre-metal dielectric layer

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[0026] In order to make the content of the present invention clearer and easier to understand, the content of the present invention will be described in detail below with reference to specific embodiments and drawings.

[0027] Before describing in detail the method for improving the HDP PSG process according to the present invention, the main steps of forming the dielectric layer before metal deposition are briefly described first. In the semiconductor processing and manufacturing process, the dielectric layer before metal deposition is used to form a planarizing dielectric layer with gettering function on the device, laying the foundation for the subsequent metal connection.

[0028] specifically, Figure 1 to Figure 5 The main steps of forming a dielectric layer before metal deposition are schematically shown. Such as Figure 1 to Figure 5 As shown, the main steps of forming a dielectric layer before metal deposition include:

[0029] First, deposit an interlayer dielectric barrier...

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Abstract

The invention provides a method for improving HSP PSG technology and a method for producing a pre-metal dielectric layer. The method for improving HSP PSG technology comprises: performing cleaning operation in order to remove accumulated films in a chamber; performing pre-deposition in order to form specific chamber atmosphere; executing hydrogen passivating treatment after the pre-deposition in order to achieve a H atom saturation state; and successively performing high-density plasma deposition on multiple wafers in order to deposit a phosphor silicate glass layer.

Description

Technical field [0001] The present invention relates to the field of semiconductor manufacturing, and more specifically, the present invention relates to a method for improving HDP PSG process. Background technique [0002] After the transistor device structure is completed, before entering the later copper process, a layer of PMD (Pre-Metal Dielectric) deposition layer is required to fill the uneven gate and source and drain regions on the surface of the transistor and the surface Smoothing lays the foundation for the leveling of the copper process in the later stage. In the process flow with a line width of 130 nanometers / 110 nanometers, the HDP (High Density Plasma) PSG (phosphosilicate glass) process often becomes the core of the dielectric layer before metal deposition. The HDP process itself has excellent hole-filling characteristics. PSG film is often used in the manufacture of dielectric layers before metal deposition. The main reason is that the phosphorus in PSG has a ...

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Application Information

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IPC IPC(8): H01L21/768H01L21/316
CPCH01L21/76819H01L21/02129H01L21/02274
Inventor 顾梅梅侯多源陈建维张旭升
Owner SHANGHAI HUALI MICROELECTRONICS CORP