Wireless apparatus and method for manufacturing same
A wireless device and flip-chip technology, applied in circuit devices, parts of amplifier devices, semiconductor/solid-state device manufacturing, etc., can solve problems such as gain reduction, and achieve the effect of suppressing characteristic deterioration and ensuring assembly strength
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Embodiment approach 1
[0067] exist figure 1 2 is a diagram showing an example of the configuration of a wireless device (module) including a power amplifier corresponding to a microwave or millimeter wave circuit as Embodiment 1 of the present invention.
[0068] In the wireless device according to Embodiment 1, the high-frequency IC chip 100 for a power amplifier is used as the high-frequency IC chip, and the high-frequency IC chip 100 for a power amplifier constituting the power amplifier includes a deviation detection circuit in addition to the main circuit 101. The process deviation detection unit 110 is integrated.
[0069] figure 1 It is an explanatory diagram of a wireless device including the high-frequency IC chip 100 for a power amplifier including the process variation detection unit 110 according to the first embodiment. figure 2 is an equivalent circuit diagram of the high-frequency IC chip 100 for a power amplifier. image 3 It is an equivalent circuit diagram of MOSFETs constit...
Embodiment approach 2
[0115] Next, an embodiment in which the circuit configuration of the deviation detection circuit is changed will be described.
[0116] In this embodiment, as the process variation detection unit 110 constituting the variation detection circuit, a MOSFET is used instead of Figure 11 The ring oscillator shown. The other configurations are the same as those in Embodiment 1, so descriptions are omitted here.
[0117] In this embodiment, the amount of variation in the threshold voltage Vth is also detected by measuring the gate voltage-drain current characteristic of the process variation detection unit 110 . Then, the parameters of the underfill used in assembly are determined based on the detected fluctuation amount of the threshold voltage Vth. That is, by monitoring the threshold voltage Vth of the MOS transistor by the process deviation detection unit 110, it is possible to estimate Figure 4 The position of the notch (notch frequency) of the input reflection coefficient ...
Embodiment approach 3
[0123] Next, Embodiment 3 of the present invention will be described. Figure 12 (a) is a view viewed from below of the power amplifier IC chip constituting the wireless device in Embodiment 3 of the present invention. Figure 12 In (a), the bumps 102 are arranged asymmetrically on the lower surface of the high-frequency IC chip 100 for a power amplifier.
[0124] When the high-frequency IC chip 100 for a power amplifier is flip-chip assembled on the assembly substrate 105, it is processed by applying pressure from above the chip, but as Figure 12 As shown in (a), in the asymmetrical bump arrangement, the pressure applied to each bump increases in a region where the number of bumps is small. Therefore, if Figure 12 As in the cross-sectional view shown in (b), the distance between the assembly substrate and the power amplifier IC chip becomes short.
[0125] Therefore, even when the same pressure is applied to the entire high-frequency IC chip 100 for a power amplifier and...
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