Semiconductor device with height-controllable fin and preparation method

A semiconductor and fin technology, applied in semiconductor devices with highly controllable fins and the field of preparation, can solve the problems of difficult control of fin height, device performance and stability reduction, etc., to achieve easy control of the preparation process, improve performance and Stability and cost reduction effects

Active Publication Date: 2014-03-26
SEMICON MFG INT (SHANGHAI) CORP
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0008] Currently, in the fabrication of fin field effect transistors, it is difficult to control the height of the fins, which leads to the occurrence of parasitic capacitance or self-heating effect (Self-Heating Effect) and fl

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  • Semiconductor device with height-controllable fin and preparation method
  • Semiconductor device with height-controllable fin and preparation method
  • Semiconductor device with height-controllable fin and preparation method

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Embodiment Construction

[0041] In the following description, a lot of specific details are given in order to provide a more thorough understanding of the present invention. However, it is obvious to those skilled in the art that the present invention can be implemented without one or more of these details. In other examples, in order to avoid confusion with the present invention, some technical features known in the art are not described.

[0042] In order to thoroughly understand the present invention, a detailed description will be provided in the following description to illustrate the semiconductor device with highly controllable fins and the manufacturing method thereof according to the present invention. Obviously, the implementation of the present invention is not limited to the specific details familiar to those skilled in the semiconductor field. The preferred embodiments of the present invention are described in detail as follows. However, in addition to these detailed descriptions, the prese...

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Abstract

The invention relates to a semiconductor device with a height-controllable fin and a preparation method. The preparation method comprises the following steps: providing a semiconductor substrate; forming a first semiconductor material layer, a second semiconductor material layer and a hard mask layer on the substrate; etching the hard mask layer, a second semiconductor material layer and a first semiconductor material layer to form a trench and a fin pattern; performing isotropic etching to remove a part of the first semiconductor material layer in the fin pattern to form a virtual fin with reduced critical size; depositing dielectric layers to fill the trench and cover the fin pattern; etching the dielectric layers till the second semiconductor material layer below, in order to expose the second semiconductor material layer to form the fin. The preparation process of the fin is easy to control, and the obtained device is more stable.

Description

Technical field [0001] The present invention relates to the field of semiconductors. In particular, the present invention relates to a semiconductor device with highly controllable fins and a manufacturing method. Background technique [0002] The improvement of integrated circuit performance is mainly achieved by continuously reducing the size of integrated circuit devices to increase its speed. At present, due to the pursuit of high device density, high performance and low cost, the semiconductor industry has advanced to the nanotechnology process node, especially when the size of semiconductor devices drops to 22nm or below, challenges from manufacturing and design have led to three-dimensional design Such as the development of fin field effect transistors (FinFET). Compared with the existing planar transistors, the FinFET device has superior performance in channel control and reduction of shallow channel effects; the planar gate structure is arranged above the channel, and i...

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Application Information

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IPC IPC(8): H01L21/28H01L21/336H01L29/423H01L29/78
CPCH01L29/6681H01L29/785
Inventor 洪中山
Owner SEMICON MFG INT (SHANGHAI) CORP
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