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Method for producing a controllable semiconductor component

A technology of semiconductors and components, applied in the field of producing controllable semiconductor components, which can solve the problems of increasing production costs and reducing structural dimensions

Active Publication Date: 2014-03-26
INFINEON TECH AG
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the mentioned sealing techniques require several process steps, which on the one hand increase the production costs and on the other hand limit the reduction of the structural dimensions (such as the cell pitch of the cell structure of the transistor, etc.)

Method used

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  • Method for producing a controllable semiconductor component
  • Method for producing a controllable semiconductor component
  • Method for producing a controllable semiconductor component

Examples

Experimental program
Comparison scheme
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Embodiment Construction

[0013] figure 1 A vertical cross-sectional view of a semiconductor body 1 with a top side 18 and a bottom side 19 opposite the top side 18 is schematically illustrated. The section plane extends perpendicularly to the top side 18 and the bottom side 19 . The semiconductor body 1 may comprise a conventional semiconductor material, such as silicon (Si), silicon carbide (SiC), gallium arsenide (GaAs), or any other semiconductor material.

[0014] Starting from the bottom side 19, the semiconductor body 1 may comprise an n-doped first semiconductor region 11, an n-doped second semiconductor region 12, a p-doped third semiconductor region 13 and n-type doped fourth semiconductor region 14 . In other embodiments, however, the semiconductor body 1 can have a different structure.

[0015] In order to produce trenches in the semiconductor body 1 , a masking layer 61 is deposited on the top side 18 and a photoresist layer 62 is deposited on the masking layer 61 . Mask layer 61 is t...

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PUM

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Abstract

Disclosed is a method for producing a controllable semiconductor component. In a semiconductor body with a top side and a bottom side, a first trench protruding from the top side into the semiconductor body and a second trench protruding from the top side into the semiconductor body are formed in a common etching process. The first trench has a first width and the second trench has a second width greater than the first width. Then, in a common process, an oxide layer is formed in the first trench and in the second trench such that the oxide layer fills the first trench and electrically insulates a surface of the second trench. Subsequently, the oxide layer is removed from the first trench completely or at least partly such that the semiconductor body comprises an exposed first surface area arranged in the first trench.

Description

technical field [0001] Embodiments of the invention relate to a method for producing a controllable semiconductor component. Background technique [0002] Controllable semiconductor elements such as MOSFET (Metal Oxide Semiconductor Field Effect Transistor), IGBT (Insulated Gate Bipolar Transistor), J-FET (Junction Field Effect Transistor), etc. are widely used as electronic switches or As an electronic switch in all types of switching converters. Many controllable semiconductor elements comprise a semiconductor body having a drain region each having a first conductivity type, a drift region adjacent to the drain region, and a source region, and a device disposed between the drift region and the source region The body region of the second conductivity type. The gate electrode is used to control the conduction channel in the body region between the source region and the drift region. The source region is electrically connected to the source electrode, which is also connect...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/336H01L21/331H01L21/337H10B12/00
CPCH01L21/76877H01L21/28008H01L21/743H01L21/76898H01L23/481H01L29/407H01L29/4236H01L29/7827H01L2924/0002H01L29/40114H01L2924/00H01L21/28229H01L29/4916H01L29/495H01L29/51H01L29/1095H01L29/66734H01L29/7813
Inventor A.迈泽尔M.聪德尔
Owner INFINEON TECH AG