Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

IGZO (Indium Gallium Zinc Oxide) transistor structure, manufacture method and display panel thereof

A manufacturing method and transistor technology, applied in semiconductor/solid-state device manufacturing, transistors, electric solid-state devices, etc., can solve problems such as damaging IGZO channels, ignoring IGZO channel protection, and affecting ohmic contact performance, so as to improve device characteristics , Improve the effect of ohmic contact

Active Publication Date: 2014-04-02
TCL CHINA STAR OPTOELECTRONICS TECH CO LTD
View PDF4 Cites 12 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] However, in the existing manufacturing methods, especially when the N-type doping of IGZO is performed by plasma treatment, the protection of the IGZO channel is neglected, and the IGZO channel is easily damaged, which affects the performance of the ohmic contact.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • IGZO (Indium Gallium Zinc Oxide) transistor structure, manufacture method and display panel thereof
  • IGZO (Indium Gallium Zinc Oxide) transistor structure, manufacture method and display panel thereof
  • IGZO (Indium Gallium Zinc Oxide) transistor structure, manufacture method and display panel thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0070] please refer again Figure 5 As shown, corresponding to Embodiment 1 of the present invention, Embodiment 3 of the present invention provides an IGZO transistor structure, including:

[0071] The source 2, the drain 3 and the IGZO 6 arranged on the substrate 1;

[0072] a protective layer 8 overlying the IGZO 6 channel;

[0073] n+IGZO region 7 formed by N-type doping in the contact region of source 2, drain 3 and IGZO 6;

[0074] a gate insulating layer 5 disposed over the protection layer 8 and the n+IGZO region 7; and

[0075] The gate 4 is provided on the gate insulating layer 5 .

[0076] Wherein, the protective layer 8 is silicon oxide.

[0077] In this embodiment, since the protective layer 8 is set above the IGZO 6 channel in the IGZO transistor structure, it can prevent the damage to the IGZO 6 channel in the plasma treatment process, and the PECVD film formation will not damage the IGZO 6 channel road. In addition, after the preparation of the protective...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention provides an IGZO (Indium Gallium Zinc Oxide)transistor, a manufacture method and a display panel thereof, wherein the manufacture method of the IGZO transistor comprises the following steps: preparing a source / drain electrode pattern layer and an IGZO pattern layer on a substrate; preparing a protective layer on an IGZO channel; performing N-shaped mix on the region where source / drain electrodes are in contact with an IGZO via plasma treatments to form an n+IGZO region; preparing a gate insulation layer and a gate pattern layer. Via the IGZO transistor, the manufacture method and the display panel, the problem of damaging the IGZO channel in the process of performing the N-shaped mix on the IGZO via the plasma treatments can be solved, and the method is helpful to improve ohmic contact and increase element characteristics.

Description

technical field [0001] The invention relates to the field of image display, in particular to a method for manufacturing an indium gallium zinc oxide semiconductor IGZO transistor. Background technique [0002] Thin-film field-effect transistors (TFTs) based on oxide semiconductors are a hot topic in the future display field, and have been extensively researched and developed in recent years. Among them, the amorphous indium gallium zinc oxide (a-IGZO) film used as the active channel layer has a mobility as high as 80cm2 / Vs (the mobility of amorphous silicon a-Si is only 0.5~0.8cm2 / Vs), and can Compatible with a-Si large-scale mass production process. Therefore, the potential application of indium gallium zinc oxide semiconductor IGZO in next-generation liquid crystal displays (LCDs) and organic light-emitting diodes (OLEDs). [0003] When the metal and IGZO are in contact, the semiconductor energy band bends at the interface to form a potential barrier. The presence of a ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): H01L29/786H01L21/77H01L27/12
CPCH01L29/7869H01L29/66969H01L29/1083H01L29/78696
Inventor 石龙强曾志远
Owner TCL CHINA STAR OPTOELECTRONICS TECH CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com