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Etching method and method for performing surface processing on solid material for solar cell

A solid material and etching technology, applied in circuits, electrical components, photovoltaic power generation, etc., can solve the problems of many processes, solar cells that cannot be applied to polycrystalline or amorphous materials, and complicated problems, and achieve the effect of increasing the etching speed

Inactive Publication Date: 2014-04-16
OSAKA UNIV +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In the case of dry etching, there are technical problems that need to be solved for device cost and large area
In addition, in the case of wet etching using alkali, it can only be applied to monocrystalline silicon solar cells using wafers having a (100) plane, and there is a technical problem that it cannot be applied to solar cells using polycrystalline or amorphous materials.
[0007] In addition, the manufacturing process of micro electromechanical elements (MEMS, Micro Electro Mechanical Systems), lenses, and mirrors is also the same as the above, and the number of processes is very large and complicated.

Method used

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  • Etching method and method for performing surface processing on solid material for solar cell
  • Etching method and method for performing surface processing on solid material for solar cell
  • Etching method and method for performing surface processing on solid material for solar cell

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0185]

[0186] Clean a 2cm square silicon substrate (1) with ultrapure water for 3 minutes, and treat it with 97% sulfuric acid and 30% hydrogen peroxide solution (sulfuric acid: hydrogen peroxide solution = 4:1 (volume ratio)) for 10 minutes to remove silicon organic matter on the substrate. After washing it with ultrapure water for 10 minutes, it was treated with dilute hydrofluoric acid for 1 minute to remove the oxide film on the surface. It was further treated with 97% sulfuric acid and 30% hydrogen peroxide solution (sulfuric acid: hydrogen peroxide solution = 4:1 (volume ratio)) for 10 minutes to make the surface hydrophilic, and finally washed with ultrapure water for 10 minutes.

[0187]

[0188] Weigh the organic compound (I) with N-F bond and the organic compound (II) with N-F bond at a ratio of 2:1 (mass ratio), temporarily heat to 95°C to melt, and mix uniformly. After cooling, the mixture obtained here was applied to the silicon substrate pretreated in step...

Embodiment 2

[0198] Except having set the temperature to 75 degreeC in process C, it carried out similarly to Example 1. Then, the same post-processing as in Example 1 was performed, and the surface (etching depth) of the obtained silicon substrate was measured with a phase-shift interference microscope.

Embodiment 3

[0200] Except having set the temperature to 100 degreeC in process C, it carried out similarly to Example 1. Then, the same post-processing as in Example 1 was performed, and the surface (etching depth) of the obtained silicon substrate was measured with a phase-shift interference microscope.

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PUM

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Abstract

Provided is an etching method including: (1) a step of bringing a material including at least one type of organic compound having an N-F bond into contact with the surface of a solid material; and (2) a step of heating the solid material; whereby etching can be performed safely and in a simple manner, at a higher etching speed, without the use of a high-environmental-load gas that causes global warming or highly reactive and toxic fluorine gas or hydrofluoric acid. The etching method may further include: (3) a step of exposing the solid material to light from the side of the material including at least one type of organic compound having an N-F bond; and (4) a step of removing the material including at least one type of organic compound having an N-F bond together with the residue between said material and the solid material. In particular, performing heating at a high temperature and applying light irradiation make it possible to form inverse-pyramid shaped recesses that are suitable for applying light-trapping and / or anti-reflection processing on the surface of the solid material for a solar cell.

Description

technical field [0001] The present invention relates to etching methods. Background technique [0002] As an etching method in a semiconductor manufacturing process, there are a dry etching method and a wet etching method. [0003] Typically, fluorocarbon-based gases or NFs used in dry etching methods 3 The coefficient of global warming is high, and the load on the environment is very large. In addition, a dry etching method using fluorine gas has also been reported (for example, refer to Patent Document 1), but the reactivity and toxicity of fluorine gas are very high, and the operation is difficult, and a scrubber (Scrubber) that circulates alkaline water is also required for the treatment of residual gas. ). [0004] On the other hand, as a wet etching method, hydrofluoric acid, fluoronitric acid (HF-HNO 3 ), buffered hydrofluoric acid, etc., but they all have high corrosiveness and toxicity, and require corresponding equipment for treatment. [0005] Therefore, the ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/18H01L31/0236
CPCH01L31/18Y02E10/52H01L31/02363H01L31/02366Y02E10/50
Inventor 森田瑞穗打越纯一塚本健太郎永井隆文足达健二
Owner OSAKA UNIV