Trench type insulated gate bipolar transistor capable of double-terminal control and preparation method thereof

A bipolar transistor and trench technology, applied in the manufacture of transistors, semiconductor devices, semiconductor/solid-state devices, etc., can solve the problems of weak reverse blocking capability, bidirectional devices with little forward blocking capability, etc. The effect of low power loss, elimination of tail current, and shortened turn-off time
CN103762162BInactive Publication Date: 2017-05-31XIAN JIEHANG ELECTRONICS SCI & TECH CO LTD
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Patent Information

Authority / Receiving Office
CN Β· China
Patent Type
Patents(China)
Current Assignee / Owner
XIAN JIEHANG ELECTRONICS SCI & TECH CO LTD
Publication Date
2017-05-31
Estimated Expiration
Not applicable Β· inactive patent

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Abstract

The invention discloses a double-end-controllable groove type insulated gate bipolar transistor which comprises a substrate. The two ends of the transistor are of structures with the same shape and variable parameters. The invention further discloses a preparation method of the double-end-controllable groove type insulated gate bipolar transistor. The double-end-controllable groove type insulated gate bipolar transistor effectively solves the problems that a common groove IGBT reverse blocking capability is poor and the turn-off time is long. The double-end-controllable groove type insulated gate bipolar transistor is high in applicability, and can replace a small circuit with bidirectional characteristics composed of a plurality of semiconductor devices, energy is greatly saved, the electric energy utilization rate is greatly improved, and the urgent affair that not enough power is supplied in China at present is relieved.
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Description

technical field

[0001] The invention belongs to the field of design and application of power semiconductor devices, and in particular relates to a trench-type insulated gate bipolar transistor capable of double-terminal control, and the invention also relates to a trench-type insulated gate bipolar transistor capable of double-terminal control method of preparation. Background technique

[0002] Insulated gate bipolar transistor (IGBT) is a power semiconductor device controlled by gate voltage, which is composed of bipolar transistor and MOS field effect transistor.

[0003] IGBT was developed in the early 1980s to solve the high conduction voltage drop of power electronic devices, especially the power field effect transistor MOSFET, which is difficult to manufacture with high blocking voltage and large on-state current characteristics, low operating frequency of power transistor GTR, and low drive current. Composite devices that appear due to large and other deficiencies. ...

Claims

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