Etchant composition for metal layers including copper and titanium

Abstract

The present invention relates to an etchant liquid composition for a metal layer, the composition comprising: persulfate; a fluorine-containing compound; an inorganic acid; a ring-type amine compound; a compound containing chlorine; phosphate; and water. More particularly, the present invention relates to an etchant liquid composition for a metal layer, the composition comprising copper and titanium.

Description

technical field [0001] The present invention relates to an etchant composition for a metal layer comprising copper and titanium, and used for gate wiring, source / Drain wiring, gate electrodes, and source / drain electrodes. Background technique [0002] The process of forming metal wiring on substrates of semiconductor devices and flat panel display devices generally includes the following processes: forming a metal layer by sputtering; coating, exposing and developing a photoresist pattern on selected regions; and performing etching. Furthermore, the etching process is carried out before or after each individual step. [0003] The etching process means a process of patterning a metal layer using a photoresist as a mask, and generally includes a dry etching process using plasma or a wet etching process using an etching solution. [0004] In recent years, the resistance of metal wiring in semiconductor devices or flat panel display devices has become a major concern. Since ...

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Problems solved by technology

[0008] However, in the process of etching copper-titanium bilayers, the problem is that different etchants with different compositions should be used for each layer

However, hydrogen peroxide-based etchant compositions have the disadvantage of being decomposed and unstable over time

And the shortcoming of potassium hydrogen persulfate type etchant composition is that its etch rate is low and can be unstable with time

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