Copper and titanium composition for metal layer etching solution

Abstract

The present invention relates to a copper and titanium composition for a metal layer etching solution comprising the following, based on the total weight of the composition: 5 to 20 wt % of persulfate; 0.01 to 2 wt % of a fluorine compound; 1-10 wt % of an additive containing one or more acids selected from inorganic acids, salts of inorganic acids, and a mixture thereof; 0.3 to 5 wt % of a cyclic amine compound; 0.1 to 5 wt % of a chlorine compound; 0.1 to 5 wt % of a p-toluene sulfonic acid; and with the remainder being water.

Description

technical field [0001] The present invention relates to an etchant composition for a metal layer containing copper and titanium, the etchant composition is used for gate, source / drain wiring, and electrodes of semiconductor devices and flat panel displays, especially for Electrode of a thin film transistor (TFT). Background technique [0002] In semiconductor devices and flat panel displays, the process of forming metal wiring on a substrate generally includes forming a metal layer by sputtering, coating photoresist, forming photoresist on selected regions by exposure and development, and etching. Furthermore, washing steps are performed before or after each individual step. The etching step leaves the metal layer on selected areas using the photoresist as a mask, and typically includes dry etching using plasma or wet etching using an etchant. [0003] For semiconductor devices and flat panel displays, especially TFTs, the gate and source / drain array wiring consists of a m...

AI Technical Summary

Problems solved by technology

In the case of potassium persulfate-based etchant compositions, the etch rate is slow and the composition becomes unstable over time

Images