Platinum-silicon nanowire infrared detector and manufacturing method thereof

Abstract

A platinum-silicon nanowire infrared detector comprises a P-type epitaxial silicon substrate layer, a platinum-silicon film photo-sensitive layer, a P-type polycrystalline silicon cap layer and an antireflection film layer. The P-type epitaxial silicon substrate layer, the platinum-silicon film photo-sensitive layer, the P-type polycrystalline silicon cap layer and the antireflection film layer are sequentially overlapped. The platinum-silicon film photo-sensitive layer is a platinum-silicon nanowire, and the platinum-silicon nanowire infrared detector works in a front illumination mode. The platinum-silicon nanowire infrared detector has the advantages that absorptive rate can be increased through the platinum-silicon nanowire, a huge fringing field exists at the top end of the platinum-silicon nanowire to generate an avalanche multiplication effect, and the quantum efficiency of the platinum-silicon nanowire infrared detector is substantially improved; through the P-type polycrystalline silicon cap layer, the escape probability of photoproduction hot holes can be doubled, exchange of movable electric charges and photoproduction free electrons in the antireflection film layer is prevented, noise and dark currents of the platinum-silicon nanowire infrared detector are reduced, the front illumination mode is adopted in the detector, the packaging technology is substantially simplified, and reliability of the detector is improved.

Description

technical field [0001] The invention relates to an infrared detector, in particular to a platinum-silicon nanowire infrared detector and a manufacturing method thereof. Background technique [0002] The platinum silicon infrared focal plane array device made of PtSi / P-Si Schottky barrier detector has the characteristics of high pixel integration, good photoresponse uniformity, good chip stability, etc., and has a wide range of applications. , HgTeCd infrared detectors, platinum-silicon infrared detector quantum efficiency of more than one order of magnitude lower; for many years, technicians have been committed to improving the quantum efficiency of platinum-silicon infrared detector research. Contents of the invention [0003] Aiming at the problems in the background technology, the present invention proposes a platinum-silicon nanowire infrared detector, the structure of which is: the platinum-silicon nanowire infrared detector includes a P-type epitaxial silicon sub...

AI Technical Summary

Problems solved by technology

[0002] The platinum silicon infrared focal plane array device made of PtSi / P-Si Schottky barrier detector has the characteristics of high pixel integration, good photoresponse uniformity, good chip stability, etc., and has a wide range of applications. Compared with HgTeCd infrared detectors, the quantum efficiency of platinum-silicon infrared detectors is more than an order of magnitude lower; for many years, technicians have been committed to improving the quantum efficiency of platinum-silicon infrared detectors.

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