Double-function storage unit with high reliability and multi-bit storage

A storage unit, reliable technology, applied in the field of dual-function storage unit, can solve the problems of low storage density, large storage unit area, etc.

Active Publication Date: 2014-05-21
致真精仪(北京)科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] 2. Compared with DRAM or flash memory, since STT-MRAM requires relatively large NMOS transistors for access control of storage units, the area of ​​its storage units is relatively large, so its storage density is relatively small

Method used

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  • Double-function storage unit with high reliability and multi-bit storage
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  • Double-function storage unit with high reliability and multi-bit storage

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Embodiment Construction

[0071] The invention provides a high-reliability dual-function storage unit capable of multi-bit storage. The substantive features of the present invention are further described with reference to the accompanying drawings. The drawings are all schematic diagrams, and the parameters such as the thickness, area and volume of each functional layer or region involved are not actual dimensions.

[0072] Detailed exemplary embodiments are disclosed herein, specific structural and functional details of which are merely for the purpose of describing particular embodiments, therefore, the invention may be embodied in many alternative forms and should not be construed as It is intended to be limited only to the exemplary embodiments set forth herein, but to cover all changes, equivalents, and alternatives falling within the scope of the invention. Additionally, well-known elements, devices and subcircuits of the invention will not be described in detail or will be omitted so as not to ...

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Abstract

The invention discloses a double-function storage unit with high reliability and multi-bit storage. The storage unit consists of a complex number of MTJs (Magnetic Tunnel Junction), wherein the MTJs are connected in series and are stacked to form an MTJ cluster; the MTJ cluster is further connected in series with an NMOS (N-Metal Oxide Semiconductor) transistor; the structure is called as an mMTJ1T structure; the MTJ cluster is used for storing data information; the NMOS transistor is used for access control on the storage unit; a bit line, namely BL, is connected with the top end of the MTJ; the drain of the NMOS transistor is connected with the bottom end of the MTJ; the grid of the NMOS transistor is connected with a word line, namely, WL; the source of the NMOS transistor is connected with a source line, namely, SL. The storage unit has two different working modes, namely, a high-reliability mode HR-Mode and multi-bit storage mode MLC-Mode, and a relatively flexible design scheme is provided for a novel storage system, so that the working modes of the storage unit can be reasonably configured according to different performance requirements in practical use, and then different demands of users are met.

Description

technical field [0001] The invention relates to a high-reliability dual-function storage unit capable of multi-bit storage, which is used for different storage application requirements and belongs to the technical field of non-volatile memory. Background technique [0002] The rapid development of material physics and electronics in recent years has prompted new non-volatile memory technologies, such as Spin Transfer Torque Magnetic Random Access Memory (STT-MRAM), Phase Change Random Access Memory (Phase Change Random Access Memory) , PCRAM) and oxide resistive random access memory (Oxide Resistive Random Access Memory, OxRRAM), etc. are emerging, which have gradually begun large-scale industrial production and entered the market. Among these new non-volatile memory technologies, STT-MRAM combines the high speed of static random access memory (SRAM), the high density of dynamic random access memory (DRAM) and the non-volatility of flash memory (Flash), and it also has low p...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G11C11/16G11C11/40H01L27/22
CPCG11C11/161G11C11/1659
Inventor 康旺郭玮赵巍胜张有光
Owner 致真精仪(北京)科技有限公司
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