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Wafer processing method and wafer obtained by the wafer processing method

A processing method and wafer technology, applied in electrical components, semiconductor/solid-state device manufacturing, circuits, etc., can solve the problems of wafer glue residue, inability to properly maintain the wafer itself, etc., to prevent glue residue and achieve good results. Effect

Inactive Publication Date: 2014-05-21
NITTO DENKO CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In this cleaning process, the adhesive layer of the adhesive sheet dissolves or swells due to the solvent used for cleaning, and sometimes the wafer itself cannot be properly held. The wafer processing ring used for wafer processing
In addition, when the adhesive sheet is peeled off after the processing process, there may be residual adhesive on the wafer

Method used

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  • Wafer processing method and wafer obtained by the wafer processing method

Examples

Experimental program
Comparison scheme
Effect test

manufacture example 1

[0069] [Manufacturing Example 1] Preparation of Adhesive Composition

[0070] For 100 parts of resin component (manufactured by TORAY COATEX CO., LTD., trade name: Rheocoat R-1020), 3 parts of isocyanate-based cross-linking agent (manufactured by Nippon Polyurethane Industry Co., Ltd., trade name: CORONATE L) as a cross-linking agent , 3 parts of photopolymerization initiators (manufactured by BASF, brand name: IRGACURE651), and 70 parts of UV curable oligomers (manufactured by Nippon Kayaku Co., Ltd., brand name: KAYARAD DPHA) were stirred to obtain an adhesive composition.

manufacture example 2

[0071] [Manufacturing example 2] Production of adhesive sheet for wafer processing

[0072] The adhesive composition obtained in Production Example 1 was applied to the release-treated surface of a release-treated film with a thickness of 38 μm so that the thickness after drying was 20 μm, and dried at 120° C. for 2 minutes using a drier. , forming an adhesive layer. This pressure-sensitive adhesive layer was bonded to a substrate (polyethylene film) to obtain a pressure-sensitive adhesive sheet for semiconductor wafer processing.

Embodiment 1

[0074] The PET film was peeled off from the adhesive sheet for wafer processing obtained in Production Example 2, and the wafer and the ring for wafer processing were simultaneously bonded together using a bonding device. Next, from the adhesive layer side of the wafer processing adhesive sheet (the side on which the wafer and the wafer processing ring are laminated), ultraviolet rays are irradiated under the following conditions so that the adhesive layer does not come into contact with the wafer and the wafer processing ring. Partial crosslinking of ring contacts for wafer processing. Next, methanol as a solvent was sprayed from the wafer and wafer processing ring side of the laminate of the wafer processing adhesive sheet, the wafer, and the wafer processing ring to clean the wafer. Then, ultraviolet rays were irradiated from the substrate side under the following conditions to peel the adhesive sheet for wafer processing from the wafer.

[0075]

[0076] Device: Nitto S...

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PUM

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Abstract

The present invention provides a wafer processing method and a wafer obtained by the wafer processing method. The wafer processing method comprises a solvent cleaning step before a random appropriate processing step is performed, wherein a wafer can be properly kept and residual adhesive after stripping of a binding sheet is prevented in the processing step. The wafer processing method of the invention comprises the steps of: a binding sheet binding step for binding the wafer on the binding strip which is provided with a substrate and an adhesive layer with radiating-ray curable adhesive; a radiating ray irradiating step of irradiating radiating ray on the adhesive layer of the binding sheet for processing the wafer; the cleaning step of cleaning the wafer by the solvent; and a processing step of processing the wafer. In the wafer processing method of the invention, the radiating ray irradiating step is performed before the cleaning step.

Description

technical field [0001] The present invention relates to a wafer processing method and a wafer obtained by the wafer processing method. Background technique [0002] In the wafer processing step, an adhesive sheet is used to properly hold the wafer during processing. In the wafer processing process, in order to remove foreign matter adhering to the wafer and / or peel off the protective film of the wafer, the wafer attached to the adhesive sheet may be cleaned before performing any appropriate processing steps. process (for example, Patent Document 1). In this cleaning step, the adhesive layer of the adhesive sheet dissolves or swells due to the solvent used for cleaning, and sometimes the wafer itself and the wafer processing ring used for wafer processing cannot be properly held. In addition, when the adhesive sheet is peeled off after the processing process, adhesive residue may be generated on the wafer. In order to solve such a problem, for example, a PSA sheet includin...

Claims

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Application Information

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IPC IPC(8): H01L21/02H01L21/683
CPCH01L21/02005H01L21/02057H01L21/6836H01L21/52
Inventor 杉村敏正田中俊平高桥智一秋月伸也
Owner NITTO DENKO CORP
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