Clamp diode, layout structure thereof and manufacturing method thereof

Abstract

The invention discloses a clamp diode comprising an N type well region on a P type substrate, P type high resistance regions at the upper part of the N type well region, a P type low resistance region between the P type high resistance regions, insulated regions at the outer sides of the P type high resistance regions, N+ deposed regions between the two insulated regions at the same side of P type high resistance regions, polysilicon layers on the insulated regions adjacent to the P type high resistance regions, and metal silicide on the P type low resistance region and the N+ deposed regions. The P type high resistance regions and the P type low resistance region are led out through the metal silicide to form the anode of the clamp diode, the N+ deposed regions are led out through the metal silicide to form the cathode of the clamp diode, and the polysilicon layers and an anode lead-out end are in short circuit connection. The invention also provides the layout structure of the clamp diode and a manufacturing method of the clamp diode. The function of a BGR circuit in a high precision voltage requirement application can be replaced by the clamp diode, the manufacturing cost of a circuit can be reduced at the same time, the integrated chip area is reduced, and the miniaturization of an integrated circuit is facilitated.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to a clamping diode. The present invention also relates to a layout structure of the clamping diode and a manufacturing method of the clamping diode Background technique [0002] Clamping diodes are widely used in integrated circuits to play the role of clamping voltage, such as clamping diodes in ESD protection circuits. Usually these circuits do not have high requirements on the accuracy of the clamping voltage, including the in-plane distribution of the clamping voltage, and the time dependence, temperature dependence, leakage and other indicators of the existing clamping diodes used in the clamping circuit are not very high. Requirements, the existing clamping diodes are usually integrated with some process parasitics, and the use of the existing clamping diodes will not increase the process cost. In actual use, BGR circuits are usually used for applications with hig...

AI Technical Summary

Problems solved by technology

In actual use, BGR circuits are usually used for applications with high-precision voltage requirements, but BGR circuits use too many electronic devices, resulting in high manufacturing costs for integrated circuits and increasing the area of ​​integrated chips, which is not conducive to the development of integrated circuits. miniaturization

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