Method for manufacturing a superhydrophobic film sheet

A thin-film, super-hydrophobic technology is applied in the field of preparation of super-hydrophobic thin-film sheets to ensure automatic cleaning, shorten curing time, and save processes.

Active Publication Date: 2014-05-21
IND FOUND OF CHONNAM NAT UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] However, as in the above-mentioned prior art document, in the case of forming a pattern using an existing semiconductor process such as an etching process, there is a problem that a series of processes from application to removal of the photoresist must be repeated at least three times.

Method used

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  • Method for manufacturing a superhydrophobic film sheet
  • Method for manufacturing a superhydrophobic film sheet
  • Method for manufacturing a superhydrophobic film sheet

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Embodiment Construction

[0026] The specific features and advantages of the present invention will be further clarified through the following detailed description based on the accompanying drawings. It should be noted beforehand that when it is judged that the detailed description of known functions and structures related to the present invention may obscure the gist of the present invention, the detailed description thereof will be omitted.

[0027] Hereinafter, the present invention will be described in detail with reference to the accompanying drawings.

[0028] refer to Figure 1 to Figure 6 , the superhydrophobic film sheet of the present invention and its preparation method are described as follows.

[0029] figure 1 It is a flow chart about the preparation method of the superhydrophobic film sheet of the present invention, as shown in the figure, the silicon wafer 10 is cleaned (S10).

[0030] At this time, the surface of the silicon wafer can be cleaned with Pirana, RCA1, RCA2, or the like....

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Abstract

The present invention relates to a method for manufacturing a superhydrophobic film sheet, and more particularly, to a method for manufacturing a superhydrophobic film sheet by generating a structure having projections for providing a superhydrophobic effect such as that of a real lotus leaf by controlling the number of times, and the amount of time, a photoresist is baked and providing a superhydrophobic surface by coating a polydimethylsiloxane (PDMS) with a transparent material having hydrophobic qualities. The method comprises the steps of: (a) cleaning a surface of a silicon wafer; (b) coating the top of the silicon wafer with a photoresist (AZ4620) using a spin coater, and soft-baking the silicon wafer in an oven; (c) exposing a structure manufactured in step (b) using a mask aligner; (d) developing using a photoresist developing solution(AZ400K); (e) performing PDMS molding on a top of a structure manufactured in step (d); and (f) removing the photoresist (AZ4620) using acetone, thereby completing a superhydrophobic film sheet having projections on an end thereof.

Description

technical field [0001] The present invention relates to a method for preparing a super-hydrophobic film sheet, in more detail, relates to a method for preparing a super-hydrophobic film sheet, which generates a structure with protrusions so that the structure has the actual charge Leaf-like super-hydrophobic effect, and coated with a hydrophobic transparent material polymer polydimethylsiloxane, so as to have a super-hydrophobic surface. Background technique [0002] So far, many studies have been conducted to artificially realize superhydrophobic surfaces, but most of them are methods of chemically treating most of the surface or forming nanostructures on silicon wafers through semiconductor processes. [0003] Regarding the preparation method of the above-mentioned pattern having a superhydrophobic surface, the above content is partially disclosed in Korean Laid-Open Patent No. 10-2010-0008579 (hereinafter referred to as “existing document”). [0004] As described in the ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/027
CPCH01L21/0273B82Y10/00B82Y40/00G03F7/00G03F7/0002G03F7/40
Inventor 李东原高建朴昇桓李使命朴终成
Owner IND FOUND OF CHONNAM NAT UNIV
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