Method for removing Si from waste liquid of Si-containing hydrofluoric acid, method for recovering hydrofluoric acid from mixed acid waste liquid of Si-containing hydrofluoric acid, and recovery device
Patent Information
- Authority / Receiving Office
- CN Β· China
- Current Assignee / Owner
- OG KK
- Publication Date
- 2014-05-28
- Estimated Expiration
- Not applicable Β· inactive patent
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Abstract
Description
technical field
[0001] The present invention relates to, for example, a method for removing Si from hydrofluoric acid-based waste liquid such as an etchant used for semiconductors, a recovery method and a recovery device for recovering hydrofluoric acid from hydrofluoric acid-based mixed acid waste liquid. Background technique
[0002] Conventionally, hydrofluoric acid-based solutions such as hydrofluoric acid-based aqueous solutions, hydrofluoric-hydrochloric acid-based aqueous solutions, and hydrofluoric-nitric acid-based aqueous solutions are used as etchant in semiconductor factories and the like. Since the etching function is lowered due to repeated etching, a large amount of hydrofluoric acid-based waste liquid is discharged from such a semiconductor factory. Since metals such as Si are mixed in the hydrofluoric acid-based waste liquid after etching, it cannot be reused. At present, the hydrofluoric acid-based waste liquid is neutralized and then drained (see Patent Do...