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Method and structure for heating microcell based on graphene field-effect transistor

A field effect tube and heating method technology, applied in the direction of transistors, electrical components, nanotechnology, etc., to achieve the effect of good uniformity, simple preparation method, and controllable heating area

Inactive Publication Date: 2014-06-04
SHANGHAI INST OF MICROSYSTEM & INFORMATION TECH CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

The electrical properties of graphene-based field effect tubes have been widely studied, but the thermal properties of graphene-based field-effect tubes have not been studied. What this application is protecting is a micro-area heating method based on graphene field-effect tubes and structure

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  • Method and structure for heating microcell based on graphene field-effect transistor
  • Method and structure for heating microcell based on graphene field-effect transistor
  • Method and structure for heating microcell based on graphene field-effect transistor

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Embodiment 1

[0051] The invention provides a micro-area heating method based on a graphene field effect tube, such as figure 1 As shown, the micro-area heating method based on graphene field effect tube at least comprises steps:

[0052] S1, preparing a graphene-based field effect tube, the graphene has a narrow-edge micro-domain structure, and the back side of the field effect tube is provided with a back grid;

[0053] S2, applying a voltage source or a current source between the electrodes at both ends of the graphene, and modulating the resistance of the narrow-side micro-domain structure by adjusting the back gate voltage, thereby realizing high-temperature heating of the narrow-side micro-domain structure, the heating The temperature range is 100 ~ 1200 ℃.

[0054] The micro-area heating method based on the graphene field effect tube of the present invention will be described in detail below in conjunction with the accompanying drawings.

[0055] First, step S1 is performed to prep...

Embodiment 2

[0072] The present invention also provides a micro-area heating structure based on a graphene field effect tube, which is used to realize the micro-area heating in Embodiment 1. The micro-area heating structure based on a graphene field effect tube at least includes: a graphene-based In a field effect tube, the graphene has a narrow-edge micro-domain structure.

[0073] Specifically, such as Figure 4a~7b As shown, the structure of the graphene-based field effect transistor includes: a target substrate 1, a graphene 2 fabricated on the target substrate 1 and having a narrow-edge micro-domain structure 21, arranged on the graphene 2 The electrodes 3 on the surfaces of both ends, and the back grid 4 electrodes arranged on the back of the field effect transistor.

[0074] Further, the structure of the graphene-based field effect tube also includes an insulating medium (not shown) located on the surface of the field effect tube for isolation.

[0075] The narrow-edge micro-domai...

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Abstract

The invention provides a method and structure for heating a microcell based on a graphene field-effect transistor. The method for heating the microcell comprises the following steps that firstly, the field-effect transistor based on graphene is prepared, the graphene is provided with a narrow-edge microcell structure, and a back gate is arranged on the back face of the field-effect transistor; secondly, a voltage source or a current source is additionally arranged between electrodes of the two ends of the graphene, the resistance of the narrow-edge microcell structure is adjusted through the adjustment of the voltage of the back gate, so that the narrow-edge microcell structure is heated, and the heating temperature ranges from 100 DEG C to 1200 DEG C. According to the method for heating the microcell based on the graphene field-effect transistor, operation is simple, microcells of different sizes can be heated, and heating zones are controllable. In addition, a method for preparing the microcell heating structure is simple, compatible with an existing MOS technology, the yield of prepared microcell heating structures is high, and evenness is good.

Description

technical field [0001] The invention belongs to the technical field of semiconductors, and particularly relates to a micro-area heating method and structure based on a graphene field effect tube. Background technique [0002] Since single-layer graphite was discovered by the Novoselov and Geim groups at the University of Manchester in 2004 [K.S.Novoselov, A.K.Geim, S.V.Morozov, D.Jiang, Y.Zhang, S.V.Dubonos, I.V.Grigorieva, and A.A.Firsov, Electric Field Effect in Atomically Thin Carbon Films, Science306,666 (2004)], the research of graphene has caused people's extensive attention. Graphene has unique physical properties that other members of the carbon family do not possess, such as the anomalous integer quantum Hall effect, the finite conductance of intrinsic graphene, and universal photoconductivity. Taking advantage of these interesting physical properties, graphene can be used in the design of novel transistor devices. [0003] Common heating methods are based on opti...

Claims

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Application Information

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IPC IPC(8): H01L21/336B82Y40/00
CPCH01L29/66045
Inventor 王慧山王浩敏孙秋娟刘晓宇谢红陈吉吴天如张学富邓联文谢晓明
Owner SHANGHAI INST OF MICROSYSTEM & INFORMATION TECH CHINESE ACAD OF SCI