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Preparation method of gas sensor element based on quasi-oriented tungsten oxide nanowires

A technology of tungsten oxide nanowires and gas sensors, applied in the direction of material resistance, etc., to achieve the effects of novel structure, fast response characteristics, and enhanced electrical stability

Inactive Publication Date: 2016-02-17
TIANJIN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] The purpose of the present invention is to overcome the series of shortcomings of the existing secondary assembly nanowire gas sensor, solve the problem of nanowire assembly on the surface of the sensor substrate in the manufacture of microsensors, and provide a method that uses tungsten metal film recrystallization to assist post-annealing Method for preparing quasi-oriented tungsten oxide nanowire-based gas sensor element by self-assembly

Method used

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  • Preparation method of gas sensor element based on quasi-oriented tungsten oxide nanowires
  • Preparation method of gas sensor element based on quasi-oriented tungsten oxide nanowires
  • Preparation method of gas sensor element based on quasi-oriented tungsten oxide nanowires

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Embodiment 1

[0030] (1) Clean the substrate

[0031] The sensor base material is thoroughly ultrasonically cleaned before use to remove surface impurities. Ultrasonic cleaning the alumina ceramic substrate in absolute ethanol for 20 minutes; take out the substrate, rinse with deionized water, and then continue ultrasonic cleaning in hydrofluoric acid solution for 5 minutes to thoroughly clean the surface impurities; then, use deionized The water was continued to be ultrasonically cleaned for 20 minutes; finally, the substrate was dried in an air atmosphere for future use.

[0032] (2) Sputtering interdigitated electrodes

[0033] The alumina sensor ceramic substrate after step (1) ultrasonic cleaning and thorough drying is placed in the vacuum chamber of the ultra-high vacuum target magnetron sputtering equipment, and the high-purity metal platinum with a mass purity of 99.999% is used as the target material. Using argon gas with a mass purity of 99.999% as the working gas, the sputterin...

Embodiment 2

[0043] Steps (1) to (4) of this embodiment are the same as in Embodiment 1, only the annealing temperature in step (5) is changed to 450° C., and other conditions remain unchanged. The nanowires obtained after annealing become sparse, some nanowires are bent, the diameter of the nanowires becomes larger, and irregular nanoparticles appear on the surface of the substrate. That is, during the annealing process of the nanowires, a few nanowires on the substrate are fused to become irregular nanoparticles, the nanowires become sparse, and the unfused nanowires are bent during the air annealing process.

Embodiment 3

[0045] Steps (1) to (4) of this embodiment are the same as in Embodiment 1, only the annealing temperature in step (5) is changed to 500° C., and other conditions remain unchanged. The annealed product nanowires become sparse and directly discontinuous with each other. That is, when the annealing temperature is 500°C, the temperature is high. During the annealing process, the nanowires that are close to each other are fused and become a thin film structure, and only a few nanowires are not fused.

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Abstract

The invention discloses a preparation method of a gas sensor based on quasi-directed tungsten oxide nanowires. An interdigital electrode and a deposited metal tungsten thin layer are plated on the substrate of the sensor in sequence, and futher the quasi-directed tungsten oxide nanowire with good appearance is obtained through annealing treatment in an assisted manner after recrystallization in a tubular vacuum oven. The nanowires are self-assembled to form a sensitive film layer with crossed quasi-directed tungsten oxide nanowires through upward recrystallization growth on the metal tungsten thin layer on the surface of the electrode. The sensor for the quasi-directed tungsten oxide nanowires based on the method disclosed by the invention has higher sensitivity for NO2 and good selectivity and stability. Good gas-sensitive property attributes to the special structural property of the sensitive film layer of the gas sensor element of the quasi-directed tungsten oxide nanowires, and great application potential is shown in the field of monitoring of poisonous NO2.

Description

technical field [0001] The invention relates to a gas sensor, in particular to a method for preparing a gas sensor element based on quasi-oriented tungsten oxide nanowires. Background technique [0002] The development of modern industry produces a large amount of flammable, explosive, toxic and harmful gases, among which nitrogen oxides (NO x ) is a typical air pollutant that can cause serious environmental problems such as acid rain and photochemical smog, and pose a huge threat to human health. Research for NO x High-performance gas sensor materials and devices for accurate detection and monitoring are of great significance to the protection of the environment and human health. Moreover, with the increasing awareness of environmental protection, people put forward higher requirements on the performance of nitrogen oxide gas sensors. Researchers have also been continuously improving the sensitivity of gas sensors by developing sensitive materials with new structures and...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G01N27/12
Inventor 秦玉香谢威威孙学斌刘长雨刘梅
Owner TIANJIN UNIV