Flange, semiconductor power device and integrated circuit board

Abstract

The invention relates to the technical field of semiconductors, and discloses a flange, a semiconductor power device and an integrated circuit board. The flange comprises a flange body and an insert embedded into the flange body, wherein the flange body is provided with a cooling frustum area and a non-cooling area, the cooling frustum area is connected with a chip and used for emitting heat of the chip, and the non-cooling area is located on the outer side of the cooling frustum area; the insert is located in the non-cooling area, and the absolute value of the difference of the thermal expansion coefficient of the insert and the thermal expansion coefficient of the chip is smaller than a set value. By means of the technical scheme, the heat generated by the chip can be emitted efficiently by means of the cooling frustum area of the flange body, meanwhile, the thermal expansion mismatch degree of the flange and the chip is reduced, thermal stress between the flange and the chip is reduced, and mechanical reliability of connection of the flange and the chip is improved.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a flange, a semiconductor power device and an integrated circuit board. Background technique [0002] With the development of semiconductor power devices towards higher output power, the thermal power consumption of the internal chips can be as high as tens or even hundreds of watts, and the heat dissipation and reliability of semiconductor packages are facing severe challenges. The packaging structure of the RF power amplifier tube includes such as Figure 1a shown in the cavity package and as Figure 1b In the plastic package shown, in these two package structures, the chip 11 is soldered to the flange 10 by hard solder (such as gold-silicon alloy solder, gold-tin alloy solder) or soft solder (such as high-lead solder), and the flange 10 As a key component, it provides mechanical support and heat dissipation for the chip 11 . Therefore, the matching degree of the coeffi...

AI Technical Summary

Problems solved by technology

Although the introduction of low thermal expansion coefficient materials such as molybdenum and tungsten reduces the thermal expansion mismatch between the flange and the chip, the thermal conductivity of molybdenum, tungsten and other materials is small, and the heat dissipation on the main heat dissipation path of the chip is increased after being stacked with copper. Therefore, the heat dissipation capability of the copper composite layer flange is poor, which limits the further improvement of the output power of power devices

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