Device for preparing graphene through large-scale electrochemical efficient stripping

Abstract

The invention relates to a graphene preparation device and in particular relates to a device for preparing graphene through large-scale electrochemical efficient stripping, mainly solving the technical problems in the prior art that graphene is not suitable to be produced in a large scale by adopting mechanical stripping methods and epitaxial growth methods, graphene products prepared by vapor deposition methods are expensive and the cellular crystal structure of graphene prepared by redox methods is seriously damaged in the oxidation process and the obtained resistance values of membranes are far higher than the resistance values required by ITO (indium tin oxide). The device comprises electrolytic baths (1), wherein a fixed rod (2) is arranged at the upper ends of the electrolytic baths (1); a pair of metal blocks (3) are fixed on the fixed rod and are respectively connected with graphite working electrodes (4) and platinum wire electrodes (5); the graphite working electrodes and the platinum wire electrodes extend into the electrolytic baths; the two metal blocks are connected with an alternating current power supply (6) via conductors.

Description

technical field [0001] The invention relates to a graphene preparation device, in particular to a device for large-scale electrochemical stripping and preparation of graphene with high efficiency. Background technique [0002] Graphene has high thermal conductivity, high intrinsic electron mobility, excellent mechanical strength, flexible elasticity and good electrical conductivity, which has attracted great attention from various countries. Since modern electronic devices, including touch screens, displays, electronic printing, light emitters, and solar cells rely on transparent conductive oxides (TCOs), however, the brittleness of these films severely limits their application in devices, and there is an urgent need to seek Promising alternatives. Graphene is an optically transparent and strongly conductive material that absorbs only 2.3% of visible light, and thus has been considered as a very promising alternative to indium tin oxide (ITO). Existing graphene preparation...

AI Technical Summary

Problems solved by technology

[0003] The present invention provides a large-scale electrochemical high-efficiency exfoliation and preparation of graphene device, which mainly solves the problems in the prior art that the mechanical exfoliation method and the epitaxial growth method are not suitable for large-scale production of graphene, and the gas phase deposition method is used to prepare graphene products. The price is expensive, and the oxidation-reduction method is used to prepare graphene. During the oxidation process, the honeycomb lattice structure of graphene is severely damaged, and the resistance value of the obtained film is much higher than the requirements of ITO.

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