Antistatic method for tft substrate
An anti-static and substrate technology, applied in circuits, electrical components, ion implantation and plating, etc., can solve the problems of poor uniformity of ITO film thickness, high power supply voltage and power, and large energy consumption, and achieve good anti-static effect and voltage. And the effect of low power and low energy consumption
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Embodiment 1
[0033] 1. Provide the TFT substrate, clean the TFT substrate and then dry it with cold air and hot air in turn, and set it aside;
[0034] 2. Prepare an ITO thin film on the TFT substrate by using intermediate frequency magnetron sputtering, wherein the voltage of intermediate frequency magnetron sputtering is 250V, the power is 700w, and the vacuum degree is 3.50×10 -1 Pa, the temperature of the TFT substrate is 100°C, the time taken to heat the TFT substrate from room temperature to 100°C is 720s, the running time of the TFT substrate is 30mm / s, the distance between the TFT substrate and the ITO target is 20mm, oxygen and argon The total air pressure is 0.3Pa.
[0035] After testing, the thickness of the prepared ITO film is The visible light transmittance is 97.0%, and the hardness is 6H, which is qualified.
[0036] After measuring the film at multiple points, the thickness uniformity is calculated, and the thickness uniformity of the ITO film is within 5%, indicating t...
Embodiment 2
[0038] 1. Provide the TFT substrate, clean the TFT substrate and then dry it with cold air and hot air in turn, and set it aside;
[0039] 2. Prepare an ITO thin film on the TFT substrate by using intermediate frequency magnetron sputtering, wherein the voltage of intermediate frequency magnetron sputtering is 300V, the power is 1000w, and the vacuum degree is 2.50×10 -1 Pa, the temperature of the TFT substrate is 90°C, the time taken to heat the TFT substrate from room temperature to 90°C is 650s, the running time of the TFT substrate is 20mm / s, the distance between the TFT substrate and the ITO target is 10mm, oxygen and argon The total air pressure is 0.3Pa.
[0040] After testing, the thickness of the prepared ITO film is The visible light transmittance is 95.0%, and the hardness is 6H, which is qualified.
[0041] After measuring the film at multiple points, the thickness uniformity is calculated, and the thickness uniformity of the ITO film is within 4%, indicating th...
Embodiment 3
[0043] 1. Provide the TFT substrate, clean the TFT substrate and then dry it with cold air and hot air in turn, and set it aside;
[0044] 2. Prepare an ITO thin film on the TFT substrate by using intermediate frequency magnetron sputtering, wherein the voltage of intermediate frequency magnetron sputtering is 280V, the power is 850w, and the vacuum degree is 3.00×10 -1 Pa, the temperature of the TFT substrate is 120°C, the time taken to heat the TFT substrate from room temperature to 120°C is 800s, the running time of the TFT substrate is 35mm / s, the distance between the TFT substrate and the ITO target is 30mm, oxygen and argon The total air pressure is 0.3Pa.
[0045] After testing, the thickness of the prepared ITO film is The visible light transmittance is 98.0%, and the hardness is 6H, which is qualified.
[0046] After measuring the film at multiple points, the thickness uniformity is calculated, and the thickness uniformity of the ITO film is within 5%, indicating t...
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