ZnGa2O4-Ga2O3 heterojunction photocatalytic material, preparation method and application of material

A photocatalytic material and heterojunction technology, applied in chemical instruments and methods, hydrocarbon production from carbon oxides, physical/chemical process catalysts, etc., can solve problems such as preparation difficulties, and achieve selective and excellent photocatalytic degradation Organic pollutants, the effect of improving the efficiency of photocatalytic reaction

Inactive Publication Date: 2014-07-02
SONY CORP +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] Although forming a heterostructure and controlling the exposure of special crystal planes can effectively improve the activity of photocatalytic materials, no one has synthesized Ga with special crystal plane exposure due to the difficulty of preparation. 2 o 3 and ZnGa 2 o 4 crystal heterojunction

Method used

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  • ZnGa2O4-Ga2O3 heterojunction photocatalytic material, preparation method and application of material
  • ZnGa2O4-Ga2O3 heterojunction photocatalytic material, preparation method and application of material
  • ZnGa2O4-Ga2O3 heterojunction photocatalytic material, preparation method and application of material

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0039] Embodiment 1 Flaky ZnGa 2 o 4 -Ga 2 o 3 Preparation of heterojunction

[0040] In a typical synthesized flake ZnGa 2 o 4 -Ga 2 o 3 During the heterojunction process, weigh 0.494g of sodium gallate powder and dissolve it in 40mL of deionized water, weigh 0.120g of acetic acid, dissolve it in 40mL of deionized water, then pour 40mL of acetic acid solution into 40mL of sodium gallate solution, After the mixed solution was stirred and reacted by magnetic force at room temperature for 8 hours, it was centrifuged and dried to obtain gallium oxyhydroxide nanosheets. Gallium oxyhydroxide nanosheets have a thickness of about 20nm and a length of about 200nm.

[0041] Weigh 0.203g of prepared gallium oxyhydroxide nanosheets, and 0.008g Zn(CH 3 COO) 2 Mix, add 5mL ethanol, grind in an agate mortar for 20min, mix well, dry at 60°C for 3h, and then calcinate in a muffle furnace at 800°C for 5h to obtain flaky ZnGa with mesoporous exposed (200) planes 2 o 4 -Ga 2 o 3 Na...

Embodiment 2

[0044] Embodiment 2 Flaky ZnGa 2 o 4 -Ga 2 o 3 Preparation of heterojunction

[0045] In a typical synthesized flake ZnGa 2 o 4 -Ga 2 o 3 During the heterojunction process, weigh 0.494g of sodium gallate powder and dissolve it in 40mL of deionized water, weigh 0.120g of acetic acid, dissolve it in 40mL of deionized water, then pour 40mL of acetic acid solution into 40mL of sodium gallate solution, After the mixed solution was stirred and reacted by magnetic force at room temperature for 5 hours, it was centrifuged and dried to obtain gallium oxyhydroxide nanosheets. Gallium oxyhydroxide nanosheets have a thickness of about 20nm and a length of about 200nm.

[0046] Weigh 0.203g of prepared gallium oxyhydroxide nanosheets, and 0.004g Zn(CH 3 COO) 2 Mix, add 10mL ethanol, fully grind in an agate mortar for 30min, mix well, dry at 80°C for 2h, and then calcinate in a muffle furnace at 1000°C for 10h to obtain a sheet with mesoporous exposed (200) plane ZnGa 2 o 4 Ga ...

Embodiment 3

[0047] Example 3 Flake ZnGa 2 o 4 -Ga 2 o 3 Preparation of heterojunction

[0048] In typical synthetic flake Ga 2 o 3 -ZnGa 2 o 4 During the heterojunction process, weigh 0.494g of sodium gallate powder and dissolve it in 40mL of deionized water, weigh 0.240g of acetic acid, dissolve it in 40mL of deionized water, then pour 40mL of acetic acid solution into 40mL of sodium gallate solution, The mixed solution was subjected to magnetic stirring reaction at room temperature for 10 h, then centrifuged and dried to obtain gallium oxyhydroxide nanosheets. Gallium oxyhydroxide nanosheets have a thickness of about 20nm and a length of about 150nm.

[0049] Weigh 0.203g of prepared gallium oxyhydroxide nanosheets, and 0.016g Zn(CH 3 COO) 2 Mix, add 5mL of ethanol, grind in an agate mortar for 20min, mix thoroughly, dry at 70°C for 2.5h, and calcinate in a muffle furnace at 900°C for 7h to obtain flaky ZnGa with mesoporous exposed (200) planes 2 o 4 -Ga 2 o 3 Nanocrystall...

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Abstract

The invention discloses a ZnGa2O4-Ga2O3 heterojunction photocatalytic material, a preparation method and application of the material. The material comprises exposed plate zinc gallate-gallium oxide nanocrystalline heterojunction with face (200) or exposed rod-shaped zinc gallate-gallium oxide nanocrystalline heterojunction with face (200). The preparation method comprises the following steps: (1) mixing zinc salt and a hydroxyl gallium oxide nanosheet or nanorod; (2) grinding and drying the mixed hydroxyl gallium oxide and zinc salt in ethanol or deionized water to obtain a mixture; and (3) firing the mixture in the step (2) at the temperature of 800-1000 DEG C for 5-10 hours to obtain the zinc gallate-gallium oxide heterojunction photocatalytic material. The material can serve as a photocatalyst to be applied to a light-catalyzed reaction.

Description

technical field [0001] The invention relates to a photocatalytic material and its preparation method and application, in particular to a ZnGa 2 o 4 -Ga 2 o 3 (Zinc gallate-gallium oxide) heterojunction photocatalytic material and its preparation method and application. Background technique [0002] In recent years, Ga 2 o 3 As an important photocatalytic material, it has attracted much attention. It has been experimentally confirmed that Ga 2 o 3 In the degradation of organic pollutants, water splitting and photocatalytic CO 2 Good effect on reduction, Ga 2 o 3 It has a good application prospect in the field of photocatalysis. [0003] High photocatalytic efficiency is the basic prerequisite for industrial application of photocatalytic materials. A large number of experimental facts have proved that the heterojunction uses the built-in electric field to make the carrier transport directional, thus effectively separating electrons and holes, reducing recombination...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): B01J23/08B01J35/10C07C1/12C07C9/04C01B3/04A62D3/17A62D101/28
CPCY02E60/364Y02E60/36
Inventor 朱诚梶浦尚志李勇明闫世成王南雁邹志刚
Owner SONY CORP
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