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Schottky diode and preparation method for balancing forward voltage drop and reverse leakage current

A technology of Schottky diode and reverse leakage current, which is applied in the manufacturing of circuits, electrical components, semiconductor/solid-state devices, etc. And other issues

Active Publication Date: 2017-01-18
CHINA RESOURCES MICROELECTRONICS (CHONGQING) CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the characteristics of Schottky diodes determine that the reverse current will increase when the forward voltage drop decreases
Most Schottky diode devices need to consider both forward voltage drop and reverse current parameters, and the barrier layer formed by a single metal cannot realize the adjustment function of forward voltage drop and reverse voltage

Method used

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  • Schottky diode and preparation method for balancing forward voltage drop and reverse leakage current
  • Schottky diode and preparation method for balancing forward voltage drop and reverse leakage current
  • Schottky diode and preparation method for balancing forward voltage drop and reverse leakage current

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Embodiment Construction

[0019] Figure 1A The semiconductor substrate 101 of the present invention is shown, its thickness includes, for example, 1 to 50 microns, and the conductivity type of the substrate 101 is usually N type. It can be understood that the substrate 101 includes a heavily doped N+ type bottom substrate, and is included in An N-type epitaxial layer grown epitaxially on the base substrate with a relatively lower doping concentration than the base substrate. Firstly, a layer of mask layer 200 is formed on the upper surface of the substrate 101, and the photoresist coated thereon, according to the photolithography technology well known to those skilled in the art, after implementing the photolithography process and the etching process, the mask layer 200 can be A plurality of openings are etched in the mask layer 200, and then the substrate 101 is etched using the mask layer 200 with the pattern of openings as an etching mask to form a plurality of parallel holes on the top of the subs...

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Abstract

The invention relates to a diode separation device for a rectifier, in particular to a Schottky diode semiconductor device and a preparing method. The Schottky diode semiconductor device is provided with a groove structure or in a planar type and a preparing method. The Schottky diode comprises a substrate and a Schottky alloy layer arranged on the substrate. The Schottky alloy layer comprises a Schottky barrier layer, a barrier adjusting layer and a metal blocking layer which sequentially cover the upper surface of the substrate from bottom to top. The barrier height of the Schottky alloy layer can be adjusted by adjusting the thickness of the barrier adjusting layer and annealing conditions.

Description

technical field [0001] The present invention relates to a diode separation device for a rectifier, more precisely, the present invention aims to provide a Schottky diode semiconductor device with a trench structure or planar type and a preparation method, which can be used in Schottky diodes A better balance between forward voltage drop and reverse leakage current. Background technique [0002] In the AC to DC converter, the rectifier is generally required to have the ability of one-way conduction. Specifically, the rectifier must have a relatively low turn-on voltage and small on-resistance when it is conducting forward conduction, but it requires High blocking voltage and low reverse leakage current. [0003] Schottky diodes have been widely used in power management as rectifier devices. Compared with PN junction diodes, some positive advantages of Schottky diodes are obvious, such as low forward turn-on voltage and fast switching speed. The advantages make it common in ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L29/872H01L29/417H01L21/329H01L21/28
CPCH01L21/28H01L29/401H01L29/47H01L29/66143H01L29/872
Inventor 陈世杰黄晓橹陈逸清
Owner CHINA RESOURCES MICROELECTRONICS (CHONGQING) CO LTD