Inverted LED chip with patterned substrate and preparation method thereof
An LED chip and patterning technology, applied in electrical components, circuits, semiconductor devices, etc., can solve the problems of high chip thermal resistance, reduced luminous efficiency, low electrical conductivity, etc. The effect of the reflection effect
Inactive Publication Date: 2014-07-02
LATTICE POWER CHANGZHOU
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Problems solved by technology
Considering that the conductivity of the P-GaN layer of traditional positive-mounted sapphire substrate high-power chips is not high, it is necessary to deposit a semi-transparent Ni / Au conductive layer on the upper surface of the P-type layer to make the current more evenly distributed. The current diffusion layer will absorb Part of the light reduces the light efficiency, and the low thermal conductivity of sapphire leads to high thermal resistance of the chip
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[0023] The present invention proposes a flip-chip LED chip structure, including a patterned sapphire substrate for emitting light, an InGaAlN multilayer structure formed on the sapphire substrate, and the patterned shape of the sapphire substrate can be figure 1 The triangular pyramid row shown, figure 2 The inverted conical shape shown, image 3 Any common regular shape such as the hemisphere shown.
[0024] The specific implementation manners of the present invention will be further described in detail below in conjunction with the accompanying drawings.
[0025] Figure 4 with Figure 5 It is a schematic diagram of the manufacturing process of the first embodiment of the present invention, such as Figure 4 As shown, an InGaAlN multilayer structure is prepared on a sapphire substrate 15 . The InGaAlN multilayer structure includes an N-type GaN layer 14 , an active layer 13 and a P-type GaN layer 12 . The P-electrode 11 is prepared on the P-type GaN layer 12 , and the...
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The invention discloses an inverted LED chip with a patterned substrate and a preparation method thereof. Patterned processing is performed on the sapphire substrate of the inverted chip and thus a light incident area of the chip is increased so that the light-emitting efficiency of the chip is improved. A preparation process is as follows: an InGaIN multilayer structure is firstly prepared on the sapphire substrate and then thinning, polishing, resist coating, photoetching and etching processing are performed on the back face of the sapphire substrate of the inverted chip so that the inverted LED chip device, the patterned shape of the sapphire substrate of which is any common regular pattern such as a triangular pyramid, an inverted cone or a hemisphere and the like, is formed.
Description
technical field [0001] The invention relates to a semiconductor light-emitting device and a preparation method thereof, in particular to a patterned LED chip on a sapphire substrate and a preparation method thereof. Background technique [0002] At present, high-power and high-brightness LEDs have become the focus of the development of the LED industry and are widely used in indoor and outdoor lighting. Considering that the conductivity of the P-GaN layer of traditional positive-mounted sapphire substrate high-power chips is not high, it is necessary to deposit a semi-transparent Ni / Au conductive layer on the upper surface of the P-type layer to make the current more evenly distributed. The current diffusion layer will absorb Part of the light reduces the light efficiency, and the low thermal conductivity of sapphire leads to high thermal resistance of the chip. In order to overcome the above disadvantages, a flip chip has been proposed. In this way, the light emitted by t...
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IPC IPC(8): H01L33/20H01L33/22
CPCH01L33/20H01L33/22
Inventor 彭翔赵汉民张璟傅建华
Owner LATTICE POWER CHANGZHOU