A spray plate and a plasma box comprising the spray plate

Abstract

The present invention discloses a spraying plate and a plasma box containing the spraying plates. According to the spraying plate, the spraying plate body is a stainless steel plate, the lower plate surface of the stainless steel plate is provided with concave grooves, the concave grooves comprise alternately arranged exciting electrode concave grooves and grounding electrode concave grooves, and the stainless steel plate is provided with through holes positioned on both sides of the concave grooves and penetrating the upper plate surface and the lower plate surface of the stainless steel plate. The plasma box comprises the spraying plates, a cover plate, N exciting electrodes and N+1 grounding electrodes, wherein the N exciting electrodes and the N+1 grounding electrodes are alternately arranged, N is an integer, the two grounding electrodes on the outermost sides are adopted as the side plates of the plasma box, discharge regions are formed between the adjacent electrodes, the top portion and the bottom portion of the exciting electrodes and the grounding electrodes are respectively provided with the one public spraying plate, the top end of the spraying plate positioned on the top portion is provided with the hollow cover plate having the opening on the bottom, the top end and the cover plate form a semi-closed cavity, and the cover plate is provided with a gas inlet. With the spraying plate, the uniformity of work gas pressure distribution in the large area plasma box discharge region can be improved so as to improve the thickness uniformity of the deposited film.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to a shower plate and a plasma box containing the shower plate. Background technique [0002] The plasma box device is generally used for depositing or peeling off thin films or for surface treatment of objects. For thin film deposition, such as depositing silicon-based semiconductor thin films on substrates, to form these thin films, working gases of different components must be introduced into the plasma box for discharge. area, and then these working gases are excited into plasma by radio frequency energy, and the desired film is deposited on the substrate through a series of chemical reactions. [0003] The structure of the plasma box is as follows figure 1 As shown, N excitation electrodes 1-4 and N+1 ground electrodes 1-5 are alternately installed in the plasma box, and the two outermost ground electrodes are used as side plates 1-12 of the plasma box, and each exci...

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Problems solved by technology

[0009] If the traditional spray plate with uniform arrangement of the above-mentioned holes is used, it will lead to the non-uniformity of the pressure distribution of the working gas after entering the discharge area, so that the decomposition amount of the reaction gas per unit volume, that is, the film deposition rate varies with the position of the substrate. , in this case for length x 0 The film thickness uniformity caused by the spray plate of 1330~1460mm is generally ±4.2%, which is much worse than the typical uniformity ±3.0% required in industrial manufacturing. For larger plasma boxes, the film thickness caused by this design is uniform Sex is worse

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