A kind of manufacturing method of semiconductor memory and semiconductor memory thereof
A manufacturing method and semiconductor technology, applied in the direction of semiconductor/solid-state device manufacturing, semiconductor devices, electric solid-state devices, etc., can solve the problems of semiconductor memory manufacturing difficulty, complicated process, high cost, etc., and achieve easy control and simple manufacturing process , the effect of reducing the difficulty of manufacturing
Active Publication Date: 2016-08-24
SUZHOU ORIENTAL SEMICONDUCTOR CO LTD
View PDF3 Cites 0 Cited by
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
[0003] As mentioned above, the disadvantages of this technical solution are: first, the floating gate 312 and the floating gate 313 and the word line sidewall 311 are formed by two deposition processes and two etching processes, and the process is complicated and difficult to control; It is difficult and costly to manufacture the semiconductor memory
Method used
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View moreImage
Smart Image Click on the blue labels to locate them in the text.
Smart ImageViewing Examples
Examples
Experimental program
Comparison scheme
Effect test
Embodiment Construction
[0030] In order to clearly illustrate the specific implementation of the present invention, the figures listed in the accompanying drawings of the description enlarge the thickness of the layers and regions described in the present invention, and the size of the figures shown does not represent the actual size; the drawings are schematic , should not limit the scope of the present invention. The embodiments listed in the description should not be limited to the specific shapes of the regions shown in the drawings, but include the obtained shapes such as deviations caused by manufacturing, etc., and the curves obtained by etching usually have curved or rounded characteristics, but All are represented by rectangles in the embodiments of the present invention; meanwhile, in the following description, the term substrate used can be understood to include the semiconductor wafer being processed and other thin film layers prepared thereon.
[0031] The specific implementation manners...
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More PUM
| Property | Measurement | Unit |
|---|---|---|
| thickness | aaaaa | aaaaa |
| thickness | aaaaa | aaaaa |
| thickness | aaaaa | aaaaa |
Login to View More
Abstract
The invention belongs to the technical field of semiconductor memory, and in particular relates to a manufacturing method of a semiconductor memory and a semiconductor memory thereof. The manufacturing method of the present invention is: after forming two lateral grooves below the control gate, depositing a silicon nitride film and filling the two lateral grooves with the silicon nitride film, and then The silicon nitride film is etched to form silicon nitride gate spacers on both sides of the control gate, and the silicon nitride film located in the two lateral grooves is used as a dummy gate for storing charges. The manufacturing method of the semiconductor memory of the present invention uses a self-alignment process to separate the gate sidewalls and dummy gates of the silicon nitride film on both sides of the control gate. The process is simple and easy to control, which not only makes the manufactured semiconductor memory The working reliability is improved and the production cost is greatly reduced.
Description
technical field [0001] The invention belongs to the technical field of semiconductor memory, and in particular relates to a method for manufacturing a semiconductor memory and the semiconductor memory. Background technique [0002] Today, with the continuous development of semiconductor memory technology, on the one hand, semiconductor memory is widely used in various electronic products, and on the other hand, the size and density of semiconductor memory are getting smaller and higher. Chinese patent application 200910027498.X proposes a semiconductor memory, such as figure 1 , which is a cross-sectional view along the length of the current channel of the device. The semiconductor memory 10 has two floating gates separated by an insulator 304, namely a floating gate 312 and a floating gate 313; the control gate is composed of a polysilicon layer 303 and a metal layer 302; the conductor layer of the control gate is an insulating layer 301 ; Word line spacers 305 and 311 ar...
Claims
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More Application Information
Patent Timeline
Login to View More Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/8247H01L27/115H01L29/792H10B69/00
CPCH01L29/40117H01L29/66833H01L29/7923
Inventor 刘伟王鹏飞袁愿林刘磊
Owner SUZHOU ORIENTAL SEMICONDUCTOR CO LTD