Photosensitive coating structure with light absorption layer and photolithographic technique using photosensitive coating structure

Abstract

The invention provides a photosensitive coating structure. The photosensitive coating structure comprises a photoresist layer and at least one light absorption layer, wherein at least one of the top part and the bottom surface of the photoresist layer is coated with the light absorption layer, and the light absorption layer can absorb exposure light rays with specific wavelengths; besides, a photolithographic technique using the photosensitive coating structure comprises the following steps: firstly, providing a substrate; then, coating the substrate with the photosensitive coating structure, wherein the photosensitive coating structure comprises the photoresist layer and at least one light absorption layer, at least one of the top part and the bottom surface of the photoresist layer is coated with the light absorption layer, and the light absorption layer can absorb exposure light rays with specific wavelengths; thirdly, providing a photolithography which is arranged above the substrate, and exposing the substrate; and finally, developing the exposed photosensitive coating structure. The photosensitive coating structure has the beneficial effects that the problem of photolithographic technique precision control is solved and the precision and the tolerance level of the photolithographic technique are effectively improved.

Description

technical field [0001] The present invention relates to a photosensitive layer structure used in a photolithography process, and in particular to a photosensitive layer structure with a light absorption layer and a photolithography process using the photosensitive layer structure. Background technique [0002] Photolithography is a very important process in optoelectronic semiconductor and integrated circuit technology. The pattern (Pattern) or impurity (Dopants) area on each layer of film is determined by the photolithography process, and the photolithography process also affects the line width on the silicon chip. Therefore, the photolithography process is a key step to make precise and small components. [0003] But the existing photolithography process is flawed, please refer to Figure 1A and Figure 1B , Figure 1A and Figure 1B What is shown is a schematic flow chart of a conventional photolithography process. In the photolithography process, the circuit structur...

AI Technical Summary

Problems solved by technology

In this case, please refer to Figure 1B , when subjected to the development step, yields results that are comparable to the ideal ( Figure 1B The dotted line 15) has a drop, so there is no way to accurately control the thickness of the line

Nowadays, electronic components are developing towards small and precise components. If the precision of photolithography cannot be controlled, it will be difficult to manufacture smaller and precise electronic components.

In other words, it becomes more difficult for the conventional photolithography process to achieve finer and more precise components, and the process window latitude becomes narrower, which hinders the improvement of product yield.

[0005] Therefore, it is worth considering by those skilled in the art how to solve the problem of poor exposure accuracy known in the photolithography process and how to successfully manufacture small and precise components.

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