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High-voltage linear voltage regulator

A voltage regulator, high-voltage line technology, applied in the direction of instruments, regulating electrical variables, control/regulating systems, etc., can solve the problems of low performance, excessive high-voltage LDO area, easy damage to the adjustment tube grid, etc., to improve performance, reduce Area, the effect of reducing usage

Inactive Publication Date: 2015-06-17
UNIV OF ELECTRONICS SCI & TECH OF CHINA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] What the present invention aims to solve is to propose a high-voltage linear voltage regulator for the above-mentioned problems of the traditional high-voltage LDO with too large area, low performance, and easy damage to the gate of the adjustment tube.

Method used

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Embodiment Construction

[0017] Below in conjunction with accompanying drawing, describe technical scheme of the present invention in detail:

[0018] A high-voltage linear regulator of the present invention, such as figure 1 and figure 2 As shown, it includes PMOS transistor MP1, NMOS transistor MN1, resistors R1, R2, capacitor C1 and error amplifier; the error amplifier includes PMOS transistors MP2, MP3, MP4, MP5, MP6; NMOS transistors MN2, MN3, MN4, MN5, MN6, MN7, MN8, MN9, MN10; resistors R3, R4; capacitor C2; diode D1; where,

[0019] The sources of MP1, MP2, MP3, MP4, MP5, and MP6 are all connected to the power supply VDD;

[0020] The drain of MP1 is connected to the gate of MN7 through capacitor C1, and is connected to the drain of MN1 through resistors R1 and R2 in turn, and its gate is connected to the drain of MP5, the drain of MP6 and the drain of MN10; the gate of MN7 The positive input of the error amplifier, the drain of MP5, the drain of MP6 and the drain of MN10 are connected as ...

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PUM

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Abstract

The invention relates to the technique of electronic circuits and particularly relates to a high-voltage linear voltage regulator. According to the high-voltage linear voltage regulator, a circuit structure to the ground is introduced, and a branch formed by connecting a resistor R4 with a Zener diode D1 in series is connected in parallel with a circuit branch formed by connecting a PMOS (P-channel Metal Oxide Semiconductor) tube MP5 and an NMOS (N-channel Metal Oxide Semiconductor) tube MN12 in series. The breakdown voltage of the Zener diode adopted by the invention is 6V, so that source electrodes of NMOS tubes including MN10 and MN9 namely the point potentials connected with the diode D1 are clamped to high-voltage -6V under the high voltage condition, and the higher voltage effectively protects a grid electrode of a regulating tube. Compared with an existing LDO (Low Dropout Regulator), the grid electrode of the regulating tube is protected and the channel length modulation effect of an MOS (Metal Oxide Semiconductor) in an error amplifier is inhibited under the high voltage condition in the starting process and in the transient response process, so that the use of a high voltage device is reduced, the area of the LDO is reduced, and the performance of the high-voltage LDO is improved. The invention is particularly suitable for the high-voltage linear voltage regulator.

Description

technical field [0001] The invention relates to electronic circuit technology, in particular to a high-voltage linear regulator. Background technique [0002] As an important circuit in the power management chip, the low-dropout linear regulator has the advantages of small chip area, low output noise, small voltage ripple and simple circuit structure. Linear regulators can provide power with low output ripple for noise-sensitive circuits such as analog circuits and radio frequency circuits, and because of their relatively simple structure and few peripheral components, they are widely used in SoCs. [0003] LDO (Low Dropout Linear Regulator) is the core module in power management, which mainly provides low-noise power supply for analog circuits and radio frequency circuits. With the development of the scale of integrated circuits, the volume and weight of electronic equipment are getting smaller and smaller, which puts forward higher and higher requirements for the miniatur...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G05F1/56
Inventor 周泽坤柯普仁石跃董渊赵倬毅王卓明鑫张波
Owner UNIV OF ELECTRONICS SCI & TECH OF CHINA
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